Abstract
Smooth, epitaxial cerium dioxide thin films have been grown in-situ in the 450-650 °C temperature range on (001) yttria-stabilized zirconia (YSZ) substrates by metal-organic chemical vapor deposition (MOCVD) using a new fluorine-free liquid Ce precursor. As assessed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM), the epitaxial films exhibit a columnar microstructure with atomically abrupt film-substrate interfaces and with only minor bending of the crystal plane parallel to the substrate surface near the interface and at the column boundaries. With fixed precursor temperature and gas flow rate, the CeO2 growth rate decreases from approximately 10 angstroms/min at 450 °C to approximately 6.5 angstroms/min at 540 °C. The root-mean-square roughness of the films also decreases from 15.5 angstroms at 450 °C to 4.3 angstroms at 540 °C. High-quality, epitaxial YBa2C3O7-x films have been successfully deposited on these MOCVD-derived CeO2 films grown at temperatures as low as 540 °C. They exhibit Tc = 86.5 K and Jc = 1.08×106 A/cm2 at 77.4 K.
| Original language | English |
|---|---|
| Pages (from-to) | 154-160 |
| Number of pages | 7 |
| Journal | Physica C: Superconductivity and its Applications |
| Volume | 320 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Jul 20 1999 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Buffers for high temperature superconductor coatings. Low temperature growth of CeO2 films by metal-organic chemical vapor deposition and their implementation as buffers. / Wang, Anchuan; Belot, John A.; Marks, Tobin J; Markworth, Paul R.; Chang, Robert P. H.; Chudzik, Michael P.; Kannewurf, Carl R.
In: Physica C: Superconductivity and its Applications, Vol. 320, No. 3, 20.07.1999, p. 154-160.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Buffers for high temperature superconductor coatings. Low temperature growth of CeO2 films by metal-organic chemical vapor deposition and their implementation as buffers
AU - Wang, Anchuan
AU - Belot, John A.
AU - Marks, Tobin J
AU - Markworth, Paul R.
AU - Chang, Robert P. H.
AU - Chudzik, Michael P.
AU - Kannewurf, Carl R.
PY - 1999/7/20
Y1 - 1999/7/20
N2 - Smooth, epitaxial cerium dioxide thin films have been grown in-situ in the 450-650 °C temperature range on (001) yttria-stabilized zirconia (YSZ) substrates by metal-organic chemical vapor deposition (MOCVD) using a new fluorine-free liquid Ce precursor. As assessed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM), the epitaxial films exhibit a columnar microstructure with atomically abrupt film-substrate interfaces and with only minor bending of the crystal plane parallel to the substrate surface near the interface and at the column boundaries. With fixed precursor temperature and gas flow rate, the CeO2 growth rate decreases from approximately 10 angstroms/min at 450 °C to approximately 6.5 angstroms/min at 540 °C. The root-mean-square roughness of the films also decreases from 15.5 angstroms at 450 °C to 4.3 angstroms at 540 °C. High-quality, epitaxial YBa2C3O7-x films have been successfully deposited on these MOCVD-derived CeO2 films grown at temperatures as low as 540 °C. They exhibit Tc = 86.5 K and Jc = 1.08×106 A/cm2 at 77.4 K.
AB - Smooth, epitaxial cerium dioxide thin films have been grown in-situ in the 450-650 °C temperature range on (001) yttria-stabilized zirconia (YSZ) substrates by metal-organic chemical vapor deposition (MOCVD) using a new fluorine-free liquid Ce precursor. As assessed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM), the epitaxial films exhibit a columnar microstructure with atomically abrupt film-substrate interfaces and with only minor bending of the crystal plane parallel to the substrate surface near the interface and at the column boundaries. With fixed precursor temperature and gas flow rate, the CeO2 growth rate decreases from approximately 10 angstroms/min at 450 °C to approximately 6.5 angstroms/min at 540 °C. The root-mean-square roughness of the films also decreases from 15.5 angstroms at 450 °C to 4.3 angstroms at 540 °C. High-quality, epitaxial YBa2C3O7-x films have been successfully deposited on these MOCVD-derived CeO2 films grown at temperatures as low as 540 °C. They exhibit Tc = 86.5 K and Jc = 1.08×106 A/cm2 at 77.4 K.
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U2 - 10.1016/S0921-4534(99)00354-8
DO - 10.1016/S0921-4534(99)00354-8
M3 - Article
VL - 320
SP - 154
EP - 160
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - 3
ER -