Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

Antonio Facchetti, Myung Han Yoon, Charlotte L. Stern, Howard E. Katz, Tobin J. Marks

Research output: Contribution to journalArticle

386 Citations (Scopus)

Abstract

A new family of perfluoroarene-modified thiophene semiconductors 1-3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2V -1s-1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.

Original languageEnglish
Pages (from-to)3900-3903
Number of pages4
JournalAngewandte Chemie - International Edition
Volume42
Issue number33
DOIs
Publication statusPublished - Aug 25 2003

Keywords

  • Conducting materials
  • Electron transport
  • Fluorine
  • Semiconductors
  • Thiophene oligomers

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)

Fingerprint Dive into the research topics of 'Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors'. Together they form a unique fingerprint.

  • Cite this