Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

Antonio Facchetti, Myung Han Yoon, Charlotte L. Stern, Howard E. Katz, Tobin J Marks

Research output: Contribution to journalArticle

369 Citations (Scopus)

Abstract

A new family of perfluoroarene-modified thiophene semiconductors 1-3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2V -1s-1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.

Original languageEnglish
Pages (from-to)3900-3903
Number of pages4
JournalAngewandte Chemie - International Edition
Volume42
Issue number33
DOIs
Publication statusPublished - Aug 25 2003

Fingerprint

Electronic equipment
Semiconductor materials
Thiophenes
Carrier mobility
Thiophene
Polymers
Thin film transistors
polythiophene

Keywords

  • Conducting materials
  • Electron transport
  • Fluorine
  • Semiconductors
  • Thiophene oligomers

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Building blocks for n-type organic electronics : Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors. / Facchetti, Antonio; Yoon, Myung Han; Stern, Charlotte L.; Katz, Howard E.; Marks, Tobin J.

In: Angewandte Chemie - International Edition, Vol. 42, No. 33, 25.08.2003, p. 3900-3903.

Research output: Contribution to journalArticle

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