Abstract
The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.
| Original language | English |
|---|---|
| Pages (from-to) | 3099-3104 |
| Number of pages | 6 |
| Journal | Physical Chemistry Chemical Physics |
| Volume | 11 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2009 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Physics and Astronomy(all)
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Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides. / Harvey, Steven P.; Mason, Thomas O; Körber, Christoph; Klein, Andreas.
In: Physical Chemistry Chemical Physics, Vol. 11, No. 17, 2009, p. 3099-3104.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides
AU - Harvey, Steven P.
AU - Mason, Thomas O
AU - Körber, Christoph
AU - Klein, Andreas
PY - 2009
Y1 - 2009
N2 - The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.
AB - The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.
UR - http://www.scopus.com/inward/record.url?scp=64949130735&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=64949130735&partnerID=8YFLogxK
U2 - 10.1039/b822149a
DO - 10.1039/b822149a
M3 - Article
C2 - 19370204
AN - SCOPUS:64949130735
VL - 11
SP - 3099
EP - 3104
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
SN - 1463-9076
IS - 17
ER -