Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides

Steven P. Harvey; Thomas O. Mason; Christoph Körber; Andreas Klein

doi:10.1039/b822149a

Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In₂O₃ transparent conducting oxides

Steven P. Harvey, Thomas O. Mason, Christoph Körber, Andreas Klein

Northwestern University

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The electrical properties of the zinc and tin codoped indium oxide, In _(2-2x)Sn_xZn_xO₃ or ZITO, were investigated via high temperature electrical measurements over a range of pO₂. Results indicate the presence of the (2Sn_InO _i″)^x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

Original language	English
Pages (from-to)	3099-3104
Number of pages	6
Journal	Physical Chemistry Chemical Physics
Volume	11
Issue number	17
DOIs	https://doi.org/10.1039/b822149a
Publication status	Published - Apr 24 2009

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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@article{4bdc701fcfdf48a99ae4c3edfcfc4ff2,

title = "Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides",

abstract = "The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.",

author = "Harvey, {Steven P.} and Mason, {Thomas O.} and Christoph K{\"o}rber and Andreas Klein",

year = "2009",

month = apr,

day = "24",

doi = "10.1039/b822149a",

language = "English",

volume = "11",

pages = "3099--3104",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

number = "17",

}

TY - JOUR

T1 - Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides

AU - Harvey, Steven P.

AU - Mason, Thomas O.

AU - Körber, Christoph

AU - Klein, Andreas

PY - 2009/4/24

Y1 - 2009/4/24

N2 - The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

AB - The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

UR - http://www.scopus.com/inward/record.url?scp=64949130735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64949130735&partnerID=8YFLogxK

U2 - 10.1039/b822149a

DO - 10.1039/b822149a

M3 - Article

C2 - 19370204

AN - SCOPUS:64949130735

VL - 11

SP - 3099

EP - 3104

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 17