Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides

Steven P. Harvey, Thomas O Mason, Christoph Körber, Andreas Klein

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

Original languageEnglish
Pages (from-to)3099-3104
Number of pages6
JournalPhysical Chemistry Chemical Physics
Volume11
Issue number17
DOIs
Publication statusPublished - 2009

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Oxides
chemistry
conduction
indium oxides
Defects
tin oxides
oxides
defects
electronics
Core levels
Photoelectron spectroscopy
Fermi level
Binding energy
Electronic properties
electrical measurement
Zinc
Electric properties
zinc
Crystal structure
binding energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Physics and Astronomy(all)

Cite this

Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides. / Harvey, Steven P.; Mason, Thomas O; Körber, Christoph; Klein, Andreas.

In: Physical Chemistry Chemical Physics, Vol. 11, No. 17, 2009, p. 3099-3104.

Research output: Contribution to journalArticle

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