Abstract
Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 838-842 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 111 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - May 2 1991 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Buried, ordered structures : Boron in Si(111) and Si(100). / Headrick, R. L.; Weir, B. E.; Levi, A. F J; Eaglesham, D. J.; Feldman, Leonard C.
In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 838-842.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Buried, ordered structures
T2 - Boron in Si(111) and Si(100)
AU - Headrick, R. L.
AU - Weir, B. E.
AU - Levi, A. F J
AU - Eaglesham, D. J.
AU - Feldman, Leonard C
PY - 1991/5/2
Y1 - 1991/5/2
N2 - Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.
AB - Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.
UR - http://www.scopus.com/inward/record.url?scp=0026413422&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026413422&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(91)91093-P
DO - 10.1016/0022-0248(91)91093-P
M3 - Article
AN - SCOPUS:0026413422
VL - 111
SP - 838
EP - 842
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -