Buried, ordered structures: Boron in Si(111) and Si(100)

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.

Original languageEnglish
Pages (from-to)838-842
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - May 2 1991

ASJC Scopus subject areas

  • Condensed Matter Physics

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