Buried, ordered structures

Boron in Si(111) and Si(100)

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.

Original languageEnglish
Pages (from-to)838-842
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - May 2 1991

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Boron
boron
Surface reconstruction
Electronic properties
Doping (additives)
Semiconductor materials
Crystalline materials
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Headrick, R. L., Weir, B. E., Levi, A. F. J., Eaglesham, D. J., & Feldman, L. C. (1991). Buried, ordered structures: Boron in Si(111) and Si(100). Journal of Crystal Growth, 111(1-4), 838-842. https://doi.org/10.1016/0022-0248(91)91093-P

Buried, ordered structures : Boron in Si(111) and Si(100). / Headrick, R. L.; Weir, B. E.; Levi, A. F J; Eaglesham, D. J.; Feldman, Leonard C.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 838-842.

Research output: Contribution to journal › Article

Headrick, RL, Weir, BE, Levi, AFJ, Eaglesham, DJ & Feldman, LC 1991, 'Buried, ordered structures: Boron in Si(111) and Si(100)', Journal of Crystal Growth, vol. 111, no. 1-4, pp. 838-842. https://doi.org/10.1016/0022-0248(91)91093-P
Headrick RL, Weir BE, Levi AFJ, Eaglesham DJ, Feldman LC. Buried, ordered structures: Boron in Si(111) and Si(100). Journal of Crystal Growth. 1991 May 2;111(1-4):838-842. https://doi.org/10.1016/0022-0248(91)91093-P
Headrick, R. L. ; Weir, B. E. ; Levi, A. F J ; Eaglesham, D. J. ; Feldman, Leonard C. / Buried, ordered structures : Boron in Si(111) and Si(100). In: Journal of Crystal Growth. 1991 ; Vol. 111, No. 1-4. pp. 838-842.
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