Buried, ordered structures: Boron in Si(111) and Si(100)

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.

Original languageEnglish
Pages (from-to)838-842
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - May 2 1991

Fingerprint

Boron
boron
Surface reconstruction
Electronic properties
Doping (additives)
Semiconductor materials
Crystalline materials
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Buried, ordered structures : Boron in Si(111) and Si(100). / Headrick, R. L.; Weir, B. E.; Levi, A. F J; Eaglesham, D. J.; Feldman, Leonard C.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 838-842.

Research output: Contribution to journalArticle

Headrick, RL, Weir, BE, Levi, AFJ, Eaglesham, DJ & Feldman, LC 1991, 'Buried, ordered structures: Boron in Si(111) and Si(100)', Journal of Crystal Growth, vol. 111, no. 1-4, pp. 838-842. https://doi.org/10.1016/0022-0248(91)91093-P
Headrick, R. L. ; Weir, B. E. ; Levi, A. F J ; Eaglesham, D. J. ; Feldman, Leonard C. / Buried, ordered structures : Boron in Si(111) and Si(100). In: Journal of Crystal Growth. 1991 ; Vol. 111, No. 1-4. pp. 838-842.
@article{fca67c117a364f1fa5b388a86fc08da0,
title = "Buried, ordered structures: Boron in Si(111) and Si(100)",
abstract = "Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.",
author = "Headrick, {R. L.} and Weir, {B. E.} and Levi, {A. F J} and Eaglesham, {D. J.} and Feldman, {Leonard C}",
year = "1991",
month = "5",
day = "2",
doi = "10.1016/0022-0248(91)91093-P",
language = "English",
volume = "111",
pages = "838--842",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Buried, ordered structures

T2 - Boron in Si(111) and Si(100)

AU - Headrick, R. L.

AU - Weir, B. E.

AU - Levi, A. F J

AU - Eaglesham, D. J.

AU - Feldman, Leonard C

PY - 1991/5/2

Y1 - 1991/5/2

N2 - Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.

AB - Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.

UR - http://www.scopus.com/inward/record.url?scp=0026413422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026413422&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)91093-P

DO - 10.1016/0022-0248(91)91093-P

M3 - Article

AN - SCOPUS:0026413422

VL - 111

SP - 838

EP - 842

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -