Buried, ordered structures: Boron in Si(111) and Si(100)

R. L. Headrick; B. E. Weir; A. F J Levi; D. J. Eaglesham; Leonard C Feldman

doi:10.1016/0022-0248(91)91093-P

Buried, ordered structures: Boron in Si(111) and Si(100)

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Two-dimensional, metastable, ordered structures have been prepared by deposition atop unique surface reconstructions. This discovery that surface superlattice structures can be buried in crystalline semiconductors suggests possibilities for ordered doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures of boron on Si(100) and Si(111) and the preservation of these structures under subsequent Si deposition.

Original language	English
Pages (from-to)	838-842
Number of pages	5
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91093-P
Publication status	Published - May 2 1991

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ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Headrick, R. L., Weir, B. E., Levi, A. F. J., Eaglesham, D. J., & Feldman, L. C. (1991). Buried, ordered structures: Boron in Si(111) and Si(100). Journal of Crystal Growth, 111(1-4), 838-842. https://doi.org/10.1016/0022-0248(91)91093-P

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10.1016/0022-0248(91)91093-P