Abstract
We theoretically predict that the series of Pb-based layered chalcogenides, PbnBi2Sen+3and PbnSb 2Ten+3, are possible new candidates for topological insulators, and the topological phases are changed from a topological insulator to a band insulator with increasing n. Among the new topological insulators, we found a large bulk band gap of 0.40 eV in PbBi2Se4, and that of Pb2Sb2Te5 is located near the phase boundary between a trivial and a nontrivial topological insulator, which raises the possibility of tuning the topological phase by changing the external parameters.
| Original language | English |
|---|---|
| Article number | 041202 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 83 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 31 2011 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Candidates for topological insulators : Pb-based chalcogenide series. / Jin, Hosub; Song, Jung Hwan; Freeman, Arthur J; Kanatzidis, Mercouri G.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 4, 041202, 31.01.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Candidates for topological insulators
T2 - Pb-based chalcogenide series
AU - Jin, Hosub
AU - Song, Jung Hwan
AU - Freeman, Arthur J
AU - Kanatzidis, Mercouri G
PY - 2011/1/31
Y1 - 2011/1/31
N2 - We theoretically predict that the series of Pb-based layered chalcogenides, PbnBi2Sen+3and PbnSb 2Ten+3, are possible new candidates for topological insulators, and the topological phases are changed from a topological insulator to a band insulator with increasing n. Among the new topological insulators, we found a large bulk band gap of 0.40 eV in PbBi2Se4, and that of Pb2Sb2Te5 is located near the phase boundary between a trivial and a nontrivial topological insulator, which raises the possibility of tuning the topological phase by changing the external parameters.
AB - We theoretically predict that the series of Pb-based layered chalcogenides, PbnBi2Sen+3and PbnSb 2Ten+3, are possible new candidates for topological insulators, and the topological phases are changed from a topological insulator to a band insulator with increasing n. Among the new topological insulators, we found a large bulk band gap of 0.40 eV in PbBi2Se4, and that of Pb2Sb2Te5 is located near the phase boundary between a trivial and a nontrivial topological insulator, which raises the possibility of tuning the topological phase by changing the external parameters.
UR - http://www.scopus.com/inward/record.url?scp=79551651243&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79551651243&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.83.041202
DO - 10.1103/PhysRevB.83.041202
M3 - Article
AN - SCOPUS:79551651243
VL - 83
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
M1 - 041202
ER -