Cantilever resonator based on the electrostriction effect in Gd-doped ceria

Roman Korobko, Ellen Wachtel, Igor Lubomirsky

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Thin films of Ce0.8Gd0.2O1.9, which have recently been shown to demonstrate giant electrostriction, are proposed as the active material for miniature cantilever resonators and actuators. In the absence of strain, these films have an electrostriction coefficient within the range of 2-10 kPa/(kV/cm)2, as compared with the somewhat larger values for the best commercial electrostrictors (e.g. PbMn1/3Nb 2/3O3, 62 kPa/(kV/cm)2. At the same time, Ce0.8Gd0.2O1.9 films can generate stress >70 MPa which is competitive with materials currently in use and only limited by the strength of the film-substrate interface. In this report, we investigate two aspects of the practical application of Ce0.8Gd0.2O 1.9 as a resonator: the fabrication conditions and the frequency dependence of the electrostrictive behavior. We show that the films can display electromechanical response with frequencies up to 6 kHz. With respect to fabrication, we show that Ce0.8Gd0.2O1.9 films have a number of technological advantages when compared to the lead titanate based materials currently in use: (a) they can be deposited on a variety of metal contacts and substrates, including silicon; (b) they do not require high temperature processing; and (c) because Ce0.8Gd0.2O 1.9 has cubic symmetry, it can in principle be used as a polycrystalline film with arbitrary texture and does not require poling. In addition, neither Ce nor Gd nor their oxides are toxic; the oxides have very low vapor pressure; and the cations, being highly charged do not diffuse into Si. Consequently, Ce0.8Gd0.2O1.9 films may be readily and advantageously integrated into existing semiconductor fabrication technologies.

Original languageEnglish
Pages (from-to)73-78
Number of pages6
JournalSensors and Actuators, A: Physical
Volume201
DOIs
Publication statusPublished - 2013

Fingerprint

Electrostriction
electrostriction
Cerium compounds
Resonators
resonators
Fabrication
Oxides
fabrication
oxides
Poisons
Silicon
Substrates
Vapor pressure
vapor pressure
Cations
electric contacts
Actuators
textures
low pressure
Textures

Keywords

  • Cantilever resonator
  • Electrostriction
  • Gd-doped ceria

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Instrumentation

Cite this

Cantilever resonator based on the electrostriction effect in Gd-doped ceria. / Korobko, Roman; Wachtel, Ellen; Lubomirsky, Igor.

In: Sensors and Actuators, A: Physical, Vol. 201, 2013, p. 73-78.

Research output: Contribution to journalArticle

@article{bb09e67bd4b04fe784cb6da9a664854a,
title = "Cantilever resonator based on the electrostriction effect in Gd-doped ceria",
abstract = "Thin films of Ce0.8Gd0.2O1.9, which have recently been shown to demonstrate giant electrostriction, are proposed as the active material for miniature cantilever resonators and actuators. In the absence of strain, these films have an electrostriction coefficient within the range of 2-10 kPa/(kV/cm)2, as compared with the somewhat larger values for the best commercial electrostrictors (e.g. PbMn1/3Nb 2/3O3, 62 kPa/(kV/cm)2. At the same time, Ce0.8Gd0.2O1.9 films can generate stress >70 MPa which is competitive with materials currently in use and only limited by the strength of the film-substrate interface. In this report, we investigate two aspects of the practical application of Ce0.8Gd0.2O 1.9 as a resonator: the fabrication conditions and the frequency dependence of the electrostrictive behavior. We show that the films can display electromechanical response with frequencies up to 6 kHz. With respect to fabrication, we show that Ce0.8Gd0.2O1.9 films have a number of technological advantages when compared to the lead titanate based materials currently in use: (a) they can be deposited on a variety of metal contacts and substrates, including silicon; (b) they do not require high temperature processing; and (c) because Ce0.8Gd0.2O 1.9 has cubic symmetry, it can in principle be used as a polycrystalline film with arbitrary texture and does not require poling. In addition, neither Ce nor Gd nor their oxides are toxic; the oxides have very low vapor pressure; and the cations, being highly charged do not diffuse into Si. Consequently, Ce0.8Gd0.2O1.9 films may be readily and advantageously integrated into existing semiconductor fabrication technologies.",
keywords = "Cantilever resonator, Electrostriction, Gd-doped ceria",
author = "Roman Korobko and Ellen Wachtel and Igor Lubomirsky",
year = "2013",
doi = "10.1016/j.sna.2013.06.021",
language = "English",
volume = "201",
pages = "73--78",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",

}

TY - JOUR

T1 - Cantilever resonator based on the electrostriction effect in Gd-doped ceria

AU - Korobko, Roman

AU - Wachtel, Ellen

AU - Lubomirsky, Igor

PY - 2013

Y1 - 2013

N2 - Thin films of Ce0.8Gd0.2O1.9, which have recently been shown to demonstrate giant electrostriction, are proposed as the active material for miniature cantilever resonators and actuators. In the absence of strain, these films have an electrostriction coefficient within the range of 2-10 kPa/(kV/cm)2, as compared with the somewhat larger values for the best commercial electrostrictors (e.g. PbMn1/3Nb 2/3O3, 62 kPa/(kV/cm)2. At the same time, Ce0.8Gd0.2O1.9 films can generate stress >70 MPa which is competitive with materials currently in use and only limited by the strength of the film-substrate interface. In this report, we investigate two aspects of the practical application of Ce0.8Gd0.2O 1.9 as a resonator: the fabrication conditions and the frequency dependence of the electrostrictive behavior. We show that the films can display electromechanical response with frequencies up to 6 kHz. With respect to fabrication, we show that Ce0.8Gd0.2O1.9 films have a number of technological advantages when compared to the lead titanate based materials currently in use: (a) they can be deposited on a variety of metal contacts and substrates, including silicon; (b) they do not require high temperature processing; and (c) because Ce0.8Gd0.2O 1.9 has cubic symmetry, it can in principle be used as a polycrystalline film with arbitrary texture and does not require poling. In addition, neither Ce nor Gd nor their oxides are toxic; the oxides have very low vapor pressure; and the cations, being highly charged do not diffuse into Si. Consequently, Ce0.8Gd0.2O1.9 films may be readily and advantageously integrated into existing semiconductor fabrication technologies.

AB - Thin films of Ce0.8Gd0.2O1.9, which have recently been shown to demonstrate giant electrostriction, are proposed as the active material for miniature cantilever resonators and actuators. In the absence of strain, these films have an electrostriction coefficient within the range of 2-10 kPa/(kV/cm)2, as compared with the somewhat larger values for the best commercial electrostrictors (e.g. PbMn1/3Nb 2/3O3, 62 kPa/(kV/cm)2. At the same time, Ce0.8Gd0.2O1.9 films can generate stress >70 MPa which is competitive with materials currently in use and only limited by the strength of the film-substrate interface. In this report, we investigate two aspects of the practical application of Ce0.8Gd0.2O 1.9 as a resonator: the fabrication conditions and the frequency dependence of the electrostrictive behavior. We show that the films can display electromechanical response with frequencies up to 6 kHz. With respect to fabrication, we show that Ce0.8Gd0.2O1.9 films have a number of technological advantages when compared to the lead titanate based materials currently in use: (a) they can be deposited on a variety of metal contacts and substrates, including silicon; (b) they do not require high temperature processing; and (c) because Ce0.8Gd0.2O 1.9 has cubic symmetry, it can in principle be used as a polycrystalline film with arbitrary texture and does not require poling. In addition, neither Ce nor Gd nor their oxides are toxic; the oxides have very low vapor pressure; and the cations, being highly charged do not diffuse into Si. Consequently, Ce0.8Gd0.2O1.9 films may be readily and advantageously integrated into existing semiconductor fabrication technologies.

KW - Cantilever resonator

KW - Electrostriction

KW - Gd-doped ceria

UR - http://www.scopus.com/inward/record.url?scp=84880901632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880901632&partnerID=8YFLogxK

U2 - 10.1016/j.sna.2013.06.021

DO - 10.1016/j.sna.2013.06.021

M3 - Article

VL - 201

SP - 73

EP - 78

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

ER -