Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits

Yongsuk Choi, Joohoon Kang, Ethan B. Secor, Jia Sun, Hyoungjun Kim, Jung Ah Lim, Moon Sung Kang, Mark C Hersam, Jeong Ho Cho

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The lamination of a high-capacitance ion gel dielectric layer onto semiconducting carbon nanotube (CNT) thin-film transistors (TFTs) that are bottom-gated with a low-capacitance polymer dielectric layer drastically reduces the operating voltage of the devices resulting from the capacitive coupling effect between the two dielectric layers sandwiching the CNT channel. As the CNT channel has a network structure, only a compact area of ion gel is required to make the capacitive coupling effect viable, unlike the planar channels of previously reported transistors that required a substantially larger area of ion gel dielectric layer to induce the coupling effect. The capacitively coupled CNT TFTs possess superlative electrical characteristics such as high carrier mobilities (42.0 cm2 (Vs)−1 for holes and 59.1 cm2 (Vs)−1 for electrons), steep subthreshold swings (160 mV dec−1 for holes and 100 mV dec−1 for electrons), and low gate leakage currents (<1 nA). These devices can be further integrated to form complex logic circuits on flexible substrates with high mechanical resilience. The layered geometry of the device coupled with scalable solution-based fabrication has significant potential for large-scale flexible electronics.

Original languageEnglish
Article number1802610
JournalAdvanced Functional Materials
Volume28
Issue number34
DOIs
Publication statusPublished - Aug 22 2018

Fingerprint

logic circuits
Carbon Nanotubes
Logic circuits
Thin film transistors
low voltage
Carbon nanotubes
nanotubes
transistors
Gels
carbon nanotubes
gels
Ions
Electric potential
thin films
ions
Capacitance
capacitance
Flexible electronics
resilience
Electrons

Keywords

  • carbon nanotubes
  • flexible circuits
  • ion gels
  • logic gates
  • polymer dielectrics
  • printing

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits. / Choi, Yongsuk; Kang, Joohoon; Secor, Ethan B.; Sun, Jia; Kim, Hyoungjun; Lim, Jung Ah; Kang, Moon Sung; Hersam, Mark C; Cho, Jeong Ho.

In: Advanced Functional Materials, Vol. 28, No. 34, 1802610, 22.08.2018.

Research output: Contribution to journalArticle

Choi, Yongsuk ; Kang, Joohoon ; Secor, Ethan B. ; Sun, Jia ; Kim, Hyoungjun ; Lim, Jung Ah ; Kang, Moon Sung ; Hersam, Mark C ; Cho, Jeong Ho. / Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits. In: Advanced Functional Materials. 2018 ; Vol. 28, No. 34.
@article{5356bd7826a74ba2bd0d72b52420ec18,
title = "Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits",
abstract = "The lamination of a high-capacitance ion gel dielectric layer onto semiconducting carbon nanotube (CNT) thin-film transistors (TFTs) that are bottom-gated with a low-capacitance polymer dielectric layer drastically reduces the operating voltage of the devices resulting from the capacitive coupling effect between the two dielectric layers sandwiching the CNT channel. As the CNT channel has a network structure, only a compact area of ion gel is required to make the capacitive coupling effect viable, unlike the planar channels of previously reported transistors that required a substantially larger area of ion gel dielectric layer to induce the coupling effect. The capacitively coupled CNT TFTs possess superlative electrical characteristics such as high carrier mobilities (42.0 cm2 (Vs)−1 for holes and 59.1 cm2 (Vs)−1 for electrons), steep subthreshold swings (160 mV dec−1 for holes and 100 mV dec−1 for electrons), and low gate leakage currents (<1 nA). These devices can be further integrated to form complex logic circuits on flexible substrates with high mechanical resilience. The layered geometry of the device coupled with scalable solution-based fabrication has significant potential for large-scale flexible electronics.",
keywords = "carbon nanotubes, flexible circuits, ion gels, logic gates, polymer dielectrics, printing",
author = "Yongsuk Choi and Joohoon Kang and Secor, {Ethan B.} and Jia Sun and Hyoungjun Kim and Lim, {Jung Ah} and Kang, {Moon Sung} and Hersam, {Mark C} and Cho, {Jeong Ho}",
year = "2018",
month = "8",
day = "22",
doi = "10.1002/adfm.201802610",
language = "English",
volume = "28",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "34",

}

TY - JOUR

T1 - Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits

AU - Choi, Yongsuk

AU - Kang, Joohoon

AU - Secor, Ethan B.

AU - Sun, Jia

AU - Kim, Hyoungjun

AU - Lim, Jung Ah

AU - Kang, Moon Sung

AU - Hersam, Mark C

AU - Cho, Jeong Ho

PY - 2018/8/22

Y1 - 2018/8/22

N2 - The lamination of a high-capacitance ion gel dielectric layer onto semiconducting carbon nanotube (CNT) thin-film transistors (TFTs) that are bottom-gated with a low-capacitance polymer dielectric layer drastically reduces the operating voltage of the devices resulting from the capacitive coupling effect between the two dielectric layers sandwiching the CNT channel. As the CNT channel has a network structure, only a compact area of ion gel is required to make the capacitive coupling effect viable, unlike the planar channels of previously reported transistors that required a substantially larger area of ion gel dielectric layer to induce the coupling effect. The capacitively coupled CNT TFTs possess superlative electrical characteristics such as high carrier mobilities (42.0 cm2 (Vs)−1 for holes and 59.1 cm2 (Vs)−1 for electrons), steep subthreshold swings (160 mV dec−1 for holes and 100 mV dec−1 for electrons), and low gate leakage currents (<1 nA). These devices can be further integrated to form complex logic circuits on flexible substrates with high mechanical resilience. The layered geometry of the device coupled with scalable solution-based fabrication has significant potential for large-scale flexible electronics.

AB - The lamination of a high-capacitance ion gel dielectric layer onto semiconducting carbon nanotube (CNT) thin-film transistors (TFTs) that are bottom-gated with a low-capacitance polymer dielectric layer drastically reduces the operating voltage of the devices resulting from the capacitive coupling effect between the two dielectric layers sandwiching the CNT channel. As the CNT channel has a network structure, only a compact area of ion gel is required to make the capacitive coupling effect viable, unlike the planar channels of previously reported transistors that required a substantially larger area of ion gel dielectric layer to induce the coupling effect. The capacitively coupled CNT TFTs possess superlative electrical characteristics such as high carrier mobilities (42.0 cm2 (Vs)−1 for holes and 59.1 cm2 (Vs)−1 for electrons), steep subthreshold swings (160 mV dec−1 for holes and 100 mV dec−1 for electrons), and low gate leakage currents (<1 nA). These devices can be further integrated to form complex logic circuits on flexible substrates with high mechanical resilience. The layered geometry of the device coupled with scalable solution-based fabrication has significant potential for large-scale flexible electronics.

KW - carbon nanotubes

KW - flexible circuits

KW - ion gels

KW - logic gates

KW - polymer dielectrics

KW - printing

UR - http://www.scopus.com/inward/record.url?scp=85051816563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051816563&partnerID=8YFLogxK

U2 - 10.1002/adfm.201802610

DO - 10.1002/adfm.201802610

M3 - Article

VL - 28

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 34

M1 - 1802610

ER -