Carrier cooling and exciton formation in GaSe

S. Nüsse, P. Haring Bolivar, H. Kurz, Victor I Klimov, F. Levy

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The initial cooling of hot carriers and the subsequent exciton formation in GaSe are studied by time-resolved photoluminescence (PL) using femtosecond up-conversion techniques. From the time-resolved PL spectra of this layered III-VI semiconductor two different energy relaxation channels are derived. After an initial subpicosecond cooling due to Fröhlich-type interaction of carriers with longitudinal optical E′(22) phonons a slower regime follows, which is dominated by deformation potential interaction with the nonpolar optical A′1(12) phonons. The coupling constant for nonpolar optical phonon scattering is derived. The subsequent formation of excitons is studied at different carrier densities and detection energies. A cross section for the free-exciton formation is determined based on a rate equation model.

Original languageEnglish
Pages (from-to)4578-4583
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume56
Issue number8
Publication statusPublished - Aug 15 1997

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Nüsse, S., Haring Bolivar, P., Kurz, H., Klimov, V. I., & Levy, F. (1997). Carrier cooling and exciton formation in GaSe. Physical Review B - Condensed Matter and Materials Physics, 56(8), 4578-4583.