Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO

Chihyu Chen, Vladimir A. Stoica, Richard D. Schaller, Roy Clarke, Jamie D. Phillips

Research output: Contribution to journalArticle

Abstract

The incorporation of electronic states in the bandgap, with high radiative efficiency, provides a means for optical up/down conversion and for tuning the carrier lifetime of a material. Such intermediate states in highly mismatched alloys have recently received much attention due to their potential for an efficient solar energy conversion. Understanding the carrier dynamics and pathways for the charge transfer of sub-bandgap transitions is critical for understanding energy conversion processes. In this work, time-resolved photoluminescence of ZnTeO is reported, revealing electron relaxation from the conduction band to the intermediate band and the carrier transfer between intermediate states and the conduction band utilizing two time-delayed optical excitations. This work demonstrates the utility of time-resolved techniques for characterizing energy conversion mechanisms in intermediate band materials, and the ability to use intermediate states to intentionally alter carrier lifetimes in materials for applications such as ultrafast scintillation.

Original languageEnglish
Article number135701
JournalJournal of Applied Physics
Volume126
Issue number13
DOIs
Publication statusPublished - Oct 7 2019

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energy conversion
carrier lifetime
conduction bands
solar energy conversion
scintillation
tuning
charge transfer
photoluminescence
electronics
excitation
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO. / Chen, Chihyu; Stoica, Vladimir A.; Schaller, Richard D.; Clarke, Roy; Phillips, Jamie D.

In: Journal of Applied Physics, Vol. 126, No. 13, 135701, 07.10.2019.

Research output: Contribution to journalArticle

Chen, Chihyu ; Stoica, Vladimir A. ; Schaller, Richard D. ; Clarke, Roy ; Phillips, Jamie D. / Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO. In: Journal of Applied Physics. 2019 ; Vol. 126, No. 13.
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