Carrier generation and inherent off-stoichiometry in Zn, Sn codoped indium oxide (ZITO) bulk and thin-film specimens

Steven P. Harvey, Thomas O Mason, D. Bruce Buchholz, Robert P. H. Chang, Christoph Körber, Andreas Klein

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Electrical studies of the Zn, Sn codoped bixbyite (In2O 3) phase (ZITO), a promising alternative to indium-tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off-stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin-film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin-film specimens. The Sn-excess character explains the persistent n-type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of "special" (optimized conductivity) compositions in phase space for pulsed laser-deposited films, and the propensity for surface chemical depletion in both bulk and thin-film specimens.

Original languageEnglish
Pages (from-to)467-472
Number of pages6
JournalJournal of the American Ceramic Society
Volume91
Issue number2
DOIs
Publication statusPublished - Feb 2008

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Stoichiometry
Indium
Thin films
Oxides
Photoelectron spectroscopy
Tin oxides
Chemical analysis
Pulsed lasers
Phase diagrams
Cations
Positive ions
Defects
indium oxide
Oxidation-Reduction
indium tin oxide

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Carrier generation and inherent off-stoichiometry in Zn, Sn codoped indium oxide (ZITO) bulk and thin-film specimens. / Harvey, Steven P.; Mason, Thomas O; Buchholz, D. Bruce; Chang, Robert P. H.; Körber, Christoph; Klein, Andreas.

In: Journal of the American Ceramic Society, Vol. 91, No. 2, 02.2008, p. 467-472.

Research output: Contribution to journalArticle

@article{3cacfbfb3956441ab0891641a6482ef9,
title = "Carrier generation and inherent off-stoichiometry in Zn, Sn codoped indium oxide (ZITO) bulk and thin-film specimens",
abstract = "Electrical studies of the Zn, Sn codoped bixbyite (In2O 3) phase (ZITO), a promising alternative to indium-tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off-stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin-film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin-film specimens. The Sn-excess character explains the persistent n-type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of {"}special{"} (optimized conductivity) compositions in phase space for pulsed laser-deposited films, and the propensity for surface chemical depletion in both bulk and thin-film specimens.",
author = "Harvey, {Steven P.} and Mason, {Thomas O} and Buchholz, {D. Bruce} and Chang, {Robert P. H.} and Christoph K{\"o}rber and Andreas Klein",
year = "2008",
month = "2",
doi = "10.1111/j.1551-2916.2007.02135.x",
language = "English",
volume = "91",
pages = "467--472",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "2",

}

TY - JOUR

T1 - Carrier generation and inherent off-stoichiometry in Zn, Sn codoped indium oxide (ZITO) bulk and thin-film specimens

AU - Harvey, Steven P.

AU - Mason, Thomas O

AU - Buchholz, D. Bruce

AU - Chang, Robert P. H.

AU - Körber, Christoph

AU - Klein, Andreas

PY - 2008/2

Y1 - 2008/2

N2 - Electrical studies of the Zn, Sn codoped bixbyite (In2O 3) phase (ZITO), a promising alternative to indium-tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off-stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin-film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin-film specimens. The Sn-excess character explains the persistent n-type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of "special" (optimized conductivity) compositions in phase space for pulsed laser-deposited films, and the propensity for surface chemical depletion in both bulk and thin-film specimens.

AB - Electrical studies of the Zn, Sn codoped bixbyite (In2O 3) phase (ZITO), a promising alternative to indium-tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off-stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin-film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin-film specimens. The Sn-excess character explains the persistent n-type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of "special" (optimized conductivity) compositions in phase space for pulsed laser-deposited films, and the propensity for surface chemical depletion in both bulk and thin-film specimens.

UR - http://www.scopus.com/inward/record.url?scp=38949184013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38949184013&partnerID=8YFLogxK

U2 - 10.1111/j.1551-2916.2007.02135.x

DO - 10.1111/j.1551-2916.2007.02135.x

M3 - Article

VL - 91

SP - 467

EP - 472

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 2

ER -