Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots

A. Mikhailovsky, S. Xu, D. McBranch, Victor I Klimov

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.

Original languageEnglish
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
PublisherIEEE
Pages86-87
Number of pages2
Publication statusPublished - 2000
EventQuantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherQuantum Electronics and Laser Science Conference (QELS 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

Fingerprint

quantum dots
photoluminescence
surface properties
passivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mikhailovsky, A., Xu, S., McBranch, D., & Klimov, V. I. (2000). Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (pp. 86-87). IEEE.

Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. / Mikhailovsky, A.; Xu, S.; McBranch, D.; Klimov, Victor I.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, 2000. p. 86-87.

Research output: Chapter in Book/Report/Conference proceedingChapter

Mikhailovsky, A, Xu, S, McBranch, D & Klimov, VI 2000, Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, pp. 86-87, Quantum Electronics and Laser Science Conference (QELS 2000), San Francisco, CA, USA, 5/7/00.
Mikhailovsky A, Xu S, McBranch D, Klimov VI. Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE. 2000. p. 86-87
Mikhailovsky, A. ; Xu, S. ; McBranch, D. ; Klimov, Victor I. / Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, 2000. pp. 86-87
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