Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots

A. Mikhailovsky, S. Xu, D. McBranch, Victor I Klimov

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.

Original languageEnglish
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
PublisherIEEE
Pages86-87
Number of pages2
Publication statusPublished - 2000
EventQuantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherQuantum Electronics and Laser Science Conference (QELS 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Mikhailovsky, A., Xu, S., McBranch, D., & Klimov, V. I. (2000). Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (pp. 86-87). IEEE.