Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots

A. Mikhailovsky; S. Xu; D. McBranch; Victor I Klimov

Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots

A. Mikhailovsky, S. Xu, D. McBranch, Victor I Klimov

Los Alamos National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.

Original language	English
Title of host publication	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Publisher	IEEE
Pages	86-87
Number of pages	2
Publication status	Published - 2000
Event	Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Other

Other	Quantum Electronics and Laser Science Conference (QELS 2000)
City	San Francisco, CA, USA
Period	5/7/00 → 5/12/00

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

Fingerprint Dive into the research topics of 'Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots'. Together they form a unique fingerprint.

Cite this

@inbook{d4adb95ca5e04e3ea67efeee2c31e07f,

title = "Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots",

abstract = "The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.",

author = "A. Mikhailovsky and S. Xu and D. McBranch and Klimov, {Victor I}",

year = "2000",

language = "English",

pages = "86--87",

booktitle = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

publisher = "IEEE",

note = "Quantum Electronics and Laser Science Conference (QELS 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

}

TY - CHAP

T1 - Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots

AU - Mikhailovsky, A.

AU - Xu, S.

AU - McBranch, D.

AU - Klimov, Victor I

PY - 2000

Y1 - 2000

N2 - The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.

AB - The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.

UR - http://www.scopus.com/inward/record.url?scp=0034547396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034547396&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0034547396

SP - 86

EP - 87

BT - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

PB - IEEE

T2 - Quantum Electronics and Laser Science Conference (QELS 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -