Abstract
The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.
| Original language | English |
|---|---|
| Title of host publication | Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series |
| Publisher | IEEE |
| Pages | 86-87 |
| Number of pages | 2 |
| Publication status | Published - 2000 |
| Event | Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000 |
Other
| Other | Quantum Electronics and Laser Science Conference (QELS 2000) |
|---|---|
| City | San Francisco, CA, USA |
| Period | 5/7/00 → 5/12/00 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots. / Mikhailovsky, A.; Xu, S.; McBranch, D.; Klimov, Victor I.
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, 2000. p. 86-87.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Carrier relaxation dynamics and photoluminescence efficiency in semiconductor quantum dots
AU - Mikhailovsky, A.
AU - Xu, S.
AU - McBranch, D.
AU - Klimov, Victor I
PY - 2000
Y1 - 2000
N2 - The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.
AB - The effect of surface/interface states on carrier dynamics and photoluminescence (PL) efficiency for strongly confined CdSe quantum dots (QDs) with a range of surface properties was studied. Data was obtained indicating that significant changes in the PL quantum yield observed in samples with different surface passivations are primarily due to changes in hole relaxation.
UR - http://www.scopus.com/inward/record.url?scp=0034547396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034547396&partnerID=8YFLogxK
M3 - Chapter
SP - 86
EP - 87
BT - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
PB - IEEE
ER -