Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

A. Yadav, M. Antia, E. Flitsiyan, L. Chernyak, Igor Lubomirsky, J. Salzman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages137-144
Number of pages8
Volume69
Edition14
ISBN (Print)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

Fingerprint

Cathodoluminescence
High electron mobility transistors
Irradiation
Defects
Activation energy
Dosimetry
Radiation
Carrier lifetime
Gamma rays
Temperature
Electrons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yadav, A., Antia, M., Flitsiyan, E., Chernyak, L., Lubomirsky, I., & Salzman, J. (2015). Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). In ECS Transactions (14 ed., Vol. 69, pp. 137-144). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0137ecst

Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). / Yadav, A.; Antia, M.; Flitsiyan, E.; Chernyak, L.; Lubomirsky, Igor; Salzman, J.

ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. p. 137-144.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yadav, A, Antia, M, Flitsiyan, E, Chernyak, L, Lubomirsky, I & Salzman, J 2015, Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). in ECS Transactions. 14 edn, vol. 69, Electrochemical Society Inc., pp. 137-144, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0137ecst
Yadav A, Antia M, Flitsiyan E, Chernyak L, Lubomirsky I, Salzman J. Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). In ECS Transactions. 14 ed. Vol. 69. Electrochemical Society Inc. 2015. p. 137-144 https://doi.org/10.1149/06914.0137ecst
Yadav, A. ; Antia, M. ; Flitsiyan, E. ; Chernyak, L. ; Lubomirsky, Igor ; Salzman, J. / Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. pp. 137-144
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