Abstract
Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publications Ltd |
| Pages | 693-696 |
| Number of pages | 4 |
| Volume | 821-823 |
| ISBN (Print) | 9783038354789 |
| DOIs | |
| Publication status | Published - 2015 |
| Event | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: Sep 21 2014 → Sep 25 2014 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 821-823 |
| ISSN (Print) | 02555476 |
Other
| Other | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 |
|---|---|
| Country | France |
| City | Grenoble |
| Period | 9/21/14 → 9/25/14 |
Fingerprint
Keywords
- As
- Counter doping
- CV
- Low temperature
- Mobility
- NO
- Sb
- SiC MOSFET
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Ahyi, A. C., Modic, A., Jiao, C., Zheng, Y., Liu, G., Feldman, L. C., & Dhar, S. (2015). Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. In Materials Science Forum (Vol. 821-823, pp. 693-696). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.693