@inproceedings{0bbf239f17884a1f877c309f588bd761,
title = "Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing",
abstract = "Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.",
keywords = "As, CV, Counter doping, Low temperature, Mobility, NO, Sb, SiC MOSFET",
author = "Ahyi, {A. C.} and A. Modic and C. Jiao and Y. Zheng and G. Liu and Feldman, {L. C.} and S. Dhar",
note = "Publisher Copyright: {\textcopyright} (2015) Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.693",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "693--696",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
}