Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing

A. C. Ahyi, A. Modic, C. Jiao, Y. Zheng, G. Liu, Leonard C Feldman, S. Dhar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages693-696
Number of pages4
Volume821-823
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)02555476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

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Keywords

  • As
  • Counter doping
  • CV
  • Low temperature
  • Mobility
  • NO
  • Sb
  • SiC MOSFET

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Ahyi, A. C., Modic, A., Jiao, C., Zheng, Y., Liu, G., Feldman, L. C., & Dhar, S. (2015). Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. In Materials Science Forum (Vol. 821-823, pp. 693-696). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.693