Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing

A. C. Ahyi, A. Modic, C. Jiao, Y. Zheng, G. Liu, Leonard C Feldman, S. Dhar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages693-696
Number of pages4
Volume821-823
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)02555476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

Fingerprint

Passivation
counters
field effect transistors
Doping (additives)
Annealing
passivity
annealing
traps
MOSFET devices
augmentation

Keywords

  • As
  • Counter doping
  • CV
  • Low temperature
  • Mobility
  • NO
  • Sb
  • SiC MOSFET

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Ahyi, A. C., Modic, A., Jiao, C., Zheng, Y., Liu, G., Feldman, L. C., & Dhar, S. (2015). Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. In Materials Science Forum (Vol. 821-823, pp. 693-696). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.693

Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. / Ahyi, A. C.; Modic, A.; Jiao, C.; Zheng, Y.; Liu, G.; Feldman, Leonard C; Dhar, S.

Materials Science Forum. Vol. 821-823 Trans Tech Publications Ltd, 2015. p. 693-696 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahyi, AC, Modic, A, Jiao, C, Zheng, Y, Liu, G, Feldman, LC & Dhar, S 2015, Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. in Materials Science Forum. vol. 821-823, Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 693-696, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 9/21/14. https://doi.org/10.4028/www.scientific.net/MSF.821-823.693
Ahyi AC, Modic A, Jiao C, Zheng Y, Liu G, Feldman LC et al. Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. In Materials Science Forum. Vol. 821-823. Trans Tech Publications Ltd. 2015. p. 693-696. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.693
Ahyi, A. C. ; Modic, A. ; Jiao, C. ; Zheng, Y. ; Liu, G. ; Feldman, Leonard C ; Dhar, S. / Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. Materials Science Forum. Vol. 821-823 Trans Tech Publications Ltd, 2015. pp. 693-696 (Materials Science Forum).
@inproceedings{0bbf239f17884a1f877c309f588bd761,
title = "Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing",
abstract = "Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.",
keywords = "As, Counter doping, CV, Low temperature, Mobility, NO, Sb, SiC MOSFET",
author = "Ahyi, {A. C.} and A. Modic and C. Jiao and Y. Zheng and G. Liu and Feldman, {Leonard C} and S. Dhar",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.693",
language = "English",
isbn = "9783038354789",
volume = "821-823",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "693--696",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing

AU - Ahyi, A. C.

AU - Modic, A.

AU - Jiao, C.

AU - Zheng, Y.

AU - Liu, G.

AU - Feldman, Leonard C

AU - Dhar, S.

PY - 2015

Y1 - 2015

N2 - Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.

AB - Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.

KW - As

KW - Counter doping

KW - CV

KW - Low temperature

KW - Mobility

KW - NO

KW - Sb

KW - SiC MOSFET

UR - http://www.scopus.com/inward/record.url?scp=84950335664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950335664&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.821-823.693

DO - 10.4028/www.scientific.net/MSF.821-823.693

M3 - Conference contribution

AN - SCOPUS:84950335664

SN - 9783038354789

VL - 821-823

T3 - Materials Science Forum

SP - 693

EP - 696

BT - Materials Science Forum

PB - Trans Tech Publications Ltd

ER -