Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing

A. C. Ahyi; A. Modic; C. Jiao; Y. Zheng; G. Liu; L. C. Feldman; S. Dhar

doi:10.4028/www.scientific.net/MSF.821-823.693

Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing

A. C. Ahyi, A. Modic, C. Jiao, Y. Zheng, G. Liu, L. C. Feldman, S. Dhar

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2014
Editors	Didier Chaussende, Gabriel Ferro
Publisher	Trans Tech Publications Ltd
Pages	693-696
Number of pages	4
ISBN (Print)	9783038354789
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.821-823.693
Publication status	Published - Jan 1 2015
Event	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: Sep 21 2014 → Sep 25 2014

Publication series

Name	Materials Science Forum
Volume	821-823
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Country	France
City	Grenoble
Period	9/21/14 → 9/25/14

Keywords

As
CV
Counter doping
Low temperature
Mobility
NO
Sb
SiC MOSFET

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

Ahyi, A. C., Modic, A., Jiao, C., Zheng, Y., Liu, G., Feldman, L. C., & Dhar, S. (2015). Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 693-696). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.693

Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. / Ahyi, A. C.; Modic, A.; Jiao, C.; Zheng, Y.; Liu, G.; Feldman, L. C.; Dhar, S.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 693-696 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ahyi, AC, Modic, A, Jiao, C, Zheng, Y, Liu, G, Feldman, LC & Dhar, S 2015, Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 693-696, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 9/21/14. https://doi.org/10.4028/www.scientific.net/MSF.821-823.693

Ahyi AC, Modic A, Jiao C, Zheng Y, Liu G, Feldman LC et al. Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. In Chaussende D, Ferro G, editors, Silicon Carbide and Related Materials 2014. Trans Tech Publications Ltd. 2015. p. 693-696. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.693

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