Abstract
Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publications Ltd |
| Pages | 693-696 |
| Number of pages | 4 |
| Volume | 821-823 |
| ISBN (Print) | 9783038354789 |
| DOIs | |
| Publication status | Published - 2015 |
| Event | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: Sep 21 2014 → Sep 25 2014 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 821-823 |
| ISSN (Print) | 02555476 |
Other
| Other | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 |
|---|---|
| Country | France |
| City | Grenoble |
| Period | 9/21/14 → 9/25/14 |
Fingerprint
Keywords
- As
- Counter doping
- CV
- Low temperature
- Mobility
- NO
- Sb
- SiC MOSFET
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing. / Ahyi, A. C.; Modic, A.; Jiao, C.; Zheng, Y.; Liu, G.; Feldman, Leonard C; Dhar, S.
Materials Science Forum. Vol. 821-823 Trans Tech Publications Ltd, 2015. p. 693-696 (Materials Science Forum; Vol. 821-823).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing
AU - Ahyi, A. C.
AU - Modic, A.
AU - Jiao, C.
AU - Zheng, Y.
AU - Liu, G.
AU - Feldman, Leonard C
AU - Dhar, S.
PY - 2015
Y1 - 2015
N2 - Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.
AB - Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristic of NO passivated devices has been identified.
KW - As
KW - Counter doping
KW - CV
KW - Low temperature
KW - Mobility
KW - NO
KW - Sb
KW - SiC MOSFET
UR - http://www.scopus.com/inward/record.url?scp=84950335664&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950335664&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.821-823.693
DO - 10.4028/www.scientific.net/MSF.821-823.693
M3 - Conference contribution
SN - 9783038354789
VL - 821-823
T3 - Materials Science Forum
SP - 693
EP - 696
BT - Materials Science Forum
PB - Trans Tech Publications Ltd
ER -