Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing

A. C. Ahyi, A. Modic, C. Jiao, Y. Zheng, G. Liu, L. C. Feldman, S. Dhar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

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