CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001).

R. S. Williams, Leonard C Feldman, A. Y. Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.

Original languageEnglish
Pages (from-to)217-220
Number of pages4
JournalRadiation Effects
Volume54
Issue number3-4
Publication statusPublished - 1981

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Crystals
Substrates
Scattering
crystals
scattering
Ion beams
ion beams
Single crystals
disorders
Ions
Crystalline materials
single crystals
gallium arsenide
ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE : Al ON GaAs (001). / Williams, R. S.; Feldman, Leonard C; Cho, A. Y.

In: Radiation Effects, Vol. 54, No. 3-4, 1981, p. 217-220.

Research output: Contribution to journalArticle

Williams, RS, Feldman, LC & Cho, AY 1981, 'CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001).', Radiation Effects, vol. 54, no. 3-4, pp. 217-220.
Williams, R. S. ; Feldman, Leonard C ; Cho, A. Y. / CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE : Al ON GaAs (001). In: Radiation Effects. 1981 ; Vol. 54, No. 3-4. pp. 217-220.
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