Abstract
The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.
| Original language | English |
|---|---|
| Pages (from-to) | 217-220 |
| Number of pages | 4 |
| Journal | Radiation Effects |
| Volume | 54 |
| Issue number | 3-4 |
| Publication status | Published - 1981 |
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ASJC Scopus subject areas
- Engineering(all)
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CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE : Al ON GaAs (001). / Williams, R. S.; Feldman, Leonard C; Cho, A. Y.
In: Radiation Effects, Vol. 54, No. 3-4, 1981, p. 217-220.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE
T2 - Al ON GaAs (001).
AU - Williams, R. S.
AU - Feldman, Leonard C
AU - Cho, A. Y.
PY - 1981
Y1 - 1981
N2 - The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.
AB - The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.
UR - http://www.scopus.com/inward/record.url?scp=0019663208&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0019663208&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0019663208
VL - 54
SP - 217
EP - 220
JO - Radiation Effects and Defects in Solids
JF - Radiation Effects and Defects in Solids
SN - 1042-0150
IS - 3-4
ER -