The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.
|Number of pages||4|
|Publication status||Published - 1981|
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