Abstract
The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.
| Original language | English |
|---|---|
| Pages (from-to) | 217-220 |
| Number of pages | 4 |
| Journal | Radiation Effects |
| Volume | 54 |
| Issue number | 3-4 |
| Publication status | Published - 1981 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Williams, R. S., Feldman, L. C., & Cho, A. Y. (1981). CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001). Radiation Effects, 54(3-4), 217-220.