CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001).

R. S. Williams; Leonard C Feldman; A. Y. Cho

CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001).

R. S. Williams, Leonard C Feldman, A. Y. Cho

Rutgers University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.

Original language	English
Pages (from-to)	217-220
Number of pages	4
Journal	Radiation Effects
Volume	54
Issue number	3-4
Publication status	Published - 1981

ASJC Scopus subject areas

Engineering(all)

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title = "CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001).",

abstract = "The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.",

author = "Williams, {R. S.} and Feldman, {Leonard C} and Cho, {A. Y.}",

year = "1981",

language = "English",

volume = "54",

pages = "217--220",

journal = "Radiation Effects and Defects in Solids",

issn = "1042-0150",

publisher = "Taylor and Francis Ltd.",

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T1 - CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE

T2 - Al ON GaAs (001).

AU - Williams, R. S.

AU - Feldman, Leonard C

AU - Cho, A. Y.

PY - 1981

Y1 - 1981

N2 - The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.

AB - The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.

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M3 - Article

AN - SCOPUS:0019663208

VL - 54

SP - 217

EP - 220

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

SN - 1042-0150

IS - 3-4

ER -