CHANNELING AT THE CRYSTAL-CRYSTAL INTERFACE: Al ON GaAs (001).

R. S. Williams, Leonard C Feldman, A. Y. Cho

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Abstract

The channeling behavior of 1. 8 Mev He** plus ions scattered from the interface region of an epitaxially grown 2300 A Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behavior in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.

Original languageEnglish
Pages (from-to)217-220
Number of pages4
JournalRadiation Effects
Volume54
Issue number3-4
Publication statusPublished - 1981

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ASJC Scopus subject areas

  • Engineering(all)

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