Channeling in iron and lattice location of implanted xenon

Leonard C Feldman, D. E. Murnick

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We have studied heavy-ion (He4, C12, N14) channeling in carefully prepared iron single crystals. Angular distributions and critical angles in good agreement with the Lindhard theory were obtained. Xe131,132 was implanted into the iron crystal at 100 or 200 keV in a random direction at doses of (1-100) × 1014 atoms/cm2. In all cases, some radiation damage was evident from an increase in the minimum channeling yield. Typically (50 ± 10)% of implanted Xe was found to be at lattice sites at low doses, while most of the atoms were not substitutional at higher doses. Annealing at 450 a°C reduced the substitutional fraction; annealing at 300 a°C did not. These data are compared with Mössbauer-effect studies of hyperfine fields on Cs in iron.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalPhysical Review B
Volume5
Issue number1
DOIs
Publication statusPublished - 1972

Fingerprint

Xenon
xenon
Iron
iron
dosage
Annealing
Heavy Ions
Atoms
annealing
Angular distribution
Radiation damage
Heavy ions
radiation damage
atoms
heavy ions
angular distribution
Single crystals
Crystals
single crystals
crystals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Channeling in iron and lattice location of implanted xenon. / Feldman, Leonard C; Murnick, D. E.

In: Physical Review B, Vol. 5, No. 1, 1972, p. 1-6.

Research output: Contribution to journalArticle

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