Channeling in iron and lattice location of implanted xenon

L. C. Feldman, D. E. Murnick

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26 Citations (Scopus)


We have studied heavy-ion (He4, C12, N14) channeling in carefully prepared iron single crystals. Angular distributions and critical angles in good agreement with the Lindhard theory were obtained. Xe131,132 was implanted into the iron crystal at 100 or 200 keV in a random direction at doses of (1-100) × 1014 atoms/cm2. In all cases, some radiation damage was evident from an increase in the minimum channeling yield. Typically (50 ± 10)% of implanted Xe was found to be at lattice sites at low doses, while most of the atoms were not substitutional at higher doses. Annealing at 450 a°C reduced the substitutional fraction; annealing at 300 a°C did not. These data are compared with Mössbauer-effect studies of hyperfine fields on Cs in iron.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalPhysical Review B
Issue number1
Publication statusPublished - 1972

ASJC Scopus subject areas

  • Condensed Matter Physics

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