Characteristic doping-dependent properties of HTS cuprate thin films prepared via MOCVD

J. L. Schindler, C. R. Duran, F. DiMeo, B. W. Wessels, B. J. Hinds, R. J. McNeely, Tobin J Marks, C. R. Kannewurf

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Thin film samples of the Bi-2212 and Tl-2212 high-Tc superconductors were prepared via metal-organic chemical vapor deposition with second generation precursors. The resulting epitaxial, c-axis oriented films were used for measurements of the in-plane resistivity versus temperature and room temperature thermoelectric power. The results for Bi-2212 thin films followed the established doping-dependent trends seen in other cuprate oxides and preliminary data for the Tl-2212 films show similar features as well. The results are compared to a generic normal state phase diagram for the cuprates.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
Publication statusPublished - Apr 1997

Keywords

  • Bi-2212
  • Doping
  • Electrical properties
  • MOCVD
  • Tl-2212

ASJC Scopus subject areas

  • Metals and Alloys

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    Schindler, J. L., Duran, C. R., DiMeo, F., Wessels, B. W., Hinds, B. J., McNeely, R. J., Marks, T. J., & Kannewurf, C. R. (1997). Characteristic doping-dependent properties of HTS cuprate thin films prepared via MOCVD. Journal of Alloys and Compounds, 251(1-2), 347-350.