The relationship between nitrogen content and interface trap density (Dit) in SiO2/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.
ASJC Scopus subject areas
- Physics and Astronomy(all)