Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC

K. McDonald; R. A. Weller; S. T. Pantelides; L. C. Feldman; G. Y. Chung; C. C. Tin; J. R. Williams

doi:10.1063/1.1542935

Characterization and modeling of the nitrogen passivation of interface traps in SiO₂/4H-SiC

K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

The relationship between nitrogen content and interface trap density (D_it) in SiO₂/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.

Original language	English
Pages (from-to)	2719-2722
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1542935
Publication status	Published - Mar 1 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Tin, C. C.

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AB - The relationship between nitrogen content and interface trap density (Dit) in SiO2/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.

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