Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC

K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams

Research output: Contribution to journalArticlepeer-review

89 Citations (Scopus)

Abstract

The relationship between nitrogen content and interface trap density (Dit) in SiO2/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.

Original languageEnglish
Pages (from-to)2719-2722
Number of pages4
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - Mar 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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