Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC

K. McDonald; R. A. Weller; S. T. Pantelides; L. C. Feldman; G. Y. Chung; C. C. Tin; J. R. Williams

doi:10.1063/1.1542935

Characterization and modeling of the nitrogen passivation of interface traps in SiO₂/4H-SiC

K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article

89 Citations (Scopus)

Abstract

The relationship between nitrogen content and interface trap density (D_it) in SiO₂/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.

Original language	English
Pages (from-to)	2719-2722
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1542935
Publication status	Published - Mar 1 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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McDonald, K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Chung, G. Y., Tin, C. C., & Williams, J. R. (2003). Characterization and modeling of the nitrogen passivation of interface traps in SiO₂/4H-SiC. Journal of Applied Physics, 93(5), 2719-2722. https://doi.org/10.1063/1.1542935

@article{10a7a36385ef4b1d9f14a4f106987f4a,

title = "Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC",

abstract = "The relationship between nitrogen content and interface trap density (Dit) in SiO2/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.",

author = "K. McDonald and Weller, {R. A.} and Pantelides, {S. T.} and Feldman, {L. C.} and Chung, {G. Y.} and Tin, {C. C.} and Williams, {J. R.}",

year = "2003",

month = mar,

day = "1",

doi = "10.1063/1.1542935",

language = "English",

volume = "93",

pages = "2719--2722",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC

AU - McDonald, K.

AU - Weller, R. A.

AU - Pantelides, S. T.

AU - Feldman, L. C.

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Williams, J. R.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - The relationship between nitrogen content and interface trap density (Dit) in SiO2/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.

AB - The relationship between nitrogen content and interface trap density (Dit) in SiO2/4H-SiC near the conduction band was quantitatively determined. It was found that the nitrogen passivation results in the dissolution of the defects, which lowers the energies of traps in the band gap. The trap passivation depends upon the nitrogen content and was independent of the annealing conditions.

UR - http://www.scopus.com/inward/record.url?scp=0037348141&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037348141&partnerID=8YFLogxK

U2 - 10.1063/1.1542935

DO - 10.1063/1.1542935

M3 - Article

AN - SCOPUS:0037348141

VL - 93

SP - 2719

EP - 2722

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -