Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC

K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams

Research output: Contribution to journalArticlepeer-review

89 Citations (Scopus)

Fingerprint Dive into the research topics of 'Characterization and modeling of the nitrogen passivation of interface traps in SiO<sub>2</sub>/4H-SiC'. Together they form a unique fingerprint.

Physics & Astronomy