Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

J. A. Peters, Z. Liu, J. Im, S. Nguyen, M. Sebastian, Arthur J Freeman, Mercouri G Kanatzidis, B. W. Wessels

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Defect levels in semi-insulating Tl6I4S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059 ± 0.007), (0.13 ± 0.012), (0.31 ± 0.074), (0.39 ± 0.019), (0.62 ± 0.110), and (0.597 ± 0.105). These defect levels are attributed to vacancies (VI, VS) and antisite defects (IS, TlS, TlI) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements.

Original languageEnglish
Article number07530
JournalJournal of Physics D: Applied Physics
Volume48
Issue number7
DOIs
Publication statusPublished - Feb 25 2015

Fingerprint

Induced currents
Single crystals
Spectroscopy
Defects
single crystals
defects
spectroscopy
antisite defects
Electron traps
photoconductivity
Photoconductivity
energy levels
Electron energy levels
traps
Vacancies
Density functional theory
density functional theory
Photoluminescence
photoluminescence
electrons

Keywords

  • Deep level defects
  • PICTS
  • Radiation detectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy. / Peters, J. A.; Liu, Z.; Im, J.; Nguyen, S.; Sebastian, M.; Freeman, Arthur J; Kanatzidis, Mercouri G; Wessels, B. W.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 7, 07530, 25.02.2015.

Research output: Contribution to journalArticle

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