Abstract
Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.
Original language | English |
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Title of host publication | Proceedings - IEEE International Symposium on Circuits and Systems |
Volume | 4 |
Publication status | Published - 2001 |
Event | IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001 |
Other
Other | IEEE International Symposium on Circuits and Systems (ISCAS 2001) |
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Country | Australia |
City | Sydney, NSW |
Period | 5/6/01 → 5/9/01 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Characterization of new materials in a four-sample thermoelectric measurement system. / Ghelani, N. A.; Loo, S. Y.; Chung, D. Y.; Sportouch, S.; De Nardi, S.; Kanatzidis, Mercouri G; Hogan, T. P.; Nolas, G. S.
Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of new materials in a four-sample thermoelectric measurement system
AU - Ghelani, N. A.
AU - Loo, S. Y.
AU - Chung, D. Y.
AU - Sportouch, S.
AU - De Nardi, S.
AU - Kanatzidis, Mercouri G
AU - Hogan, T. P.
AU - Nolas, G. S.
PY - 2001
Y1 - 2001
N2 - Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.
AB - Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.
UR - http://www.scopus.com/inward/record.url?scp=0035018976&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035018976&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0035018976
VL - 4
BT - Proceedings - IEEE International Symposium on Circuits and Systems
ER -