Characterization of new materials in a four-sample thermoelectric measurement system

N. A. Ghelani; S. Y. Loo; D. Y. Chung; S. Sportouch; S. De Nardi; M. G. Kanatzidis; T. P. Hogan; G. S. Nolas

Characterization of new materials in a four-sample thermoelectric measurement system

N. A. Ghelani, S. Y. Loo, D. Y. Chung, S. Sportouch, S. De Nardi, M. G. Kanatzidis, T. P. Hogan, G. S. Nolas

Northwestern University

Research output: Contribution to journal › Conference article

Abstract

Several new materials in the CsBi₄Te₆, A₂Bi₈Se₁₃, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ₃ (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab View^TM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.

Original language	English
Pages (from-to)	Z861-Z866
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
Publication status	Published - Jan 1 2001
Event	IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Ghelani, N. A., Loo, S. Y., Chung, D. Y., Sportouch, S., De Nardi, S., Kanatzidis, M. G., Hogan, T. P., & Nolas, G. S. (2001). Characterization of new materials in a four-sample thermoelectric measurement system. Proceedings - IEEE International Symposium on Circuits and Systems, 4, Z861-Z866.

Characterization of new materials in a four-sample thermoelectric measurement system. / Ghelani, N. A.; Loo, S. Y.; Chung, D. Y.; Sportouch, S.; De Nardi, S.; Kanatzidis, M. G.; Hogan, T. P.; Nolas, G. S.

In: Proceedings - IEEE International Symposium on Circuits and Systems, Vol. 4, 01.01.2001, p. Z861-Z866.

Research output: Contribution to journal › Conference article

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title = "Characterization of new materials in a four-sample thermoelectric measurement system",

abstract = "Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.",

author = "Ghelani, {N. A.} and Loo, {S. Y.} and Chung, {D. Y.} and S. Sportouch and {De Nardi}, S. and Kanatzidis, {M. G.} and Hogan, {T. P.} and Nolas, {G. S.}",

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note = "IEEE International Symposium on Circuits and Systems (ISCAS 2001) ; Conference date: 06-05-2001 Through 09-05-2001",

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T1 - Characterization of new materials in a four-sample thermoelectric measurement system

AU - Ghelani, N. A.

AU - Loo, S. Y.

AU - Chung, D. Y.

AU - Sportouch, S.

AU - De Nardi, S.

AU - Kanatzidis, M. G.

AU - Hogan, T. P.

AU - Nolas, G. S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.

AB - Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.

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VL - 4

SP - Z861-Z866

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

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T2 - IEEE International Symposium on Circuits and Systems (ISCAS 2001)

Y2 - 6 May 2001 through 9 May 2001

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