Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

N. P. Guisinger, R. Basu, M. E. Greene, A. S. Baluch, Mark C Hersam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
Pages195-197
Number of pages3
DOIs
Publication statusPublished - 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

Fingerprint

Resonant tunneling diodes
Scanning tunneling microscopy
Silicon
Molecules
Current voltage characteristics
Electron energy levels
Doping (additives)
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Guisinger, N. P., Basu, R., Greene, M. E., Baluch, A. S., & Hersam, M. C. (2004). Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. In Device Research Conference - Conference Digest, DRC (pp. 195-197). [VI.A.-1] https://doi.org/10.1109/DRC.2004.1367861

Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. / Guisinger, N. P.; Basu, R.; Greene, M. E.; Baluch, A. S.; Hersam, Mark C.

Device Research Conference - Conference Digest, DRC. 2004. p. 195-197 VI.A.-1.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guisinger, NP, Basu, R, Greene, ME, Baluch, AS & Hersam, MC 2004, Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. in Device Research Conference - Conference Digest, DRC., VI.A.-1, pp. 195-197, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367861
Guisinger NP, Basu R, Greene ME, Baluch AS, Hersam MC. Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. In Device Research Conference - Conference Digest, DRC. 2004. p. 195-197. VI.A.-1 https://doi.org/10.1109/DRC.2004.1367861
Guisinger, N. P. ; Basu, R. ; Greene, M. E. ; Baluch, A. S. ; Hersam, Mark C. / Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. Device Research Conference - Conference Digest, DRC. 2004. pp. 195-197
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