Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

N. P. Guisinger, R. Basu, M. E. Greene, A. S. Baluch, M. C. Hersam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages195-197
Number of pages3
DOIs
Publication statusPublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Guisinger, N. P., Basu, R., Greene, M. E., Baluch, A. S., & Hersam, M. C. (2004). Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. In Device Research Conference - Conference Digest, 62nd DRC (pp. 195-197). [VI.A.-1] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367861