Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

N. P. Guisinger; R. Basu; M. E. Greene; A. S. Baluch; M. C. Hersam

doi:10.1109/DRC.2004.1367861

Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

N. P. Guisinger, R. Basu, M. E. Greene, A. S. Baluch, M. C. Hersam

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	195-197
Number of pages	3
DOIs	https://doi.org/10.1109/DRC.2004.1367861
Publication status	Published - Dec 1 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/DRC.2004.1367861

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Cite this

Guisinger, N. P., Basu, R., Greene, M. E., Baluch, A. S., & Hersam, M. C. (2004). Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. In Device Research Conference - Conference Digest, 62nd DRC (pp. 195-197). [VI.A.-1] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367861

Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. / Guisinger, N. P.; Basu, R.; Greene, M. E.; Baluch, A. S.; Hersam, M. C.

Device Research Conference - Conference Digest, 62nd DRC. 2004. p. 195-197 VI.A.-1 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Guisinger, NP, Basu, R, Greene, ME, Baluch, AS & Hersam, MC 2004, Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. in Device Research Conference - Conference Digest, 62nd DRC., VI.A.-1, Device Research Conference - Conference Digest, DRC, pp. 195-197, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367861

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abstract = "The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.",

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AB - The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

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