Abstract
The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.
| Original language | English |
|---|---|
| Title of host publication | Device Research Conference - Conference Digest, DRC |
| Pages | 195-197 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2004 |
| Event | Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004 |
Other
| Other | Device Research Conference - Conference Digest, 62nd DRC |
|---|---|
| Country | United States |
| City | Notre Dame, IN |
| Period | 6/21/04 → 6/23/04 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. / Guisinger, N. P.; Basu, R.; Greene, M. E.; Baluch, A. S.; Hersam, Mark C.
Device Research Conference - Conference Digest, DRC. 2004. p. 195-197 VI.A.-1.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy
AU - Guisinger, N. P.
AU - Basu, R.
AU - Greene, M. E.
AU - Baluch, A. S.
AU - Hersam, Mark C
PY - 2004
Y1 - 2004
N2 - The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.
AB - The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.
UR - http://www.scopus.com/inward/record.url?scp=18044385158&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18044385158&partnerID=8YFLogxK
U2 - 10.1109/DRC.2004.1367861
DO - 10.1109/DRC.2004.1367861
M3 - Conference contribution
AN - SCOPUS:18044385158
SN - 0780382846
SP - 195
EP - 197
BT - Device Research Conference - Conference Digest, DRC
ER -