Characterization of thallium-based ternary semiconductor compounds for radiation detection

Zhifu Liu; John A. Peters; Sandy Nguyen; Maria Sebastian; Bruce W. Wessels; Shichao Wang; Hosub Jin; Jino Im; Arthur J. Freeman; Mercouri G. Kanatzidis

doi:10.1117/12.928325

Characterization of thallium-based ternary semiconductor compounds for radiation detection

Zhifu Liu, John A. Peters, Sandy Nguyen, Maria Sebastian, Bruce W. Wessels, Shichao Wang, Hosub Jin, Jino Im, Arthur J. Freeman, Mercouri G. Kanatzidis

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl₆I₄Se, Tl₆I₄S, Tl ₃SbS₃, Tl₂SnS₃, and Tl ₇Bi₃I₁₆ for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl₆I₄S and Tl₆I₄Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For ¹³⁷Cs radiation, Tl₆I₄Se has a well-resolved spectral response comparable to that of CdZnTe.

Original language	English
Title of host publication	Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
DOIs	https://doi.org/10.1117/12.928325
Publication status	Published - Dec 1 2012
Event	Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States Duration: Aug 13 2012 → Aug 15 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8507
ISSN (Print)	0277-786X

Other

Other	Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Country	United States
City	San Diego, CA
Period	8/13/12 → 8/15/12

Keywords

Photoconductivity
Tl-chalcogenide
Wide gap semiconductor
X-ray detector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Liu, Z., Peters, J. A., Nguyen, S., Sebastian, M., Wessels, B. W., Wang, S., Jin, H., Im, J., Freeman, A. J., & Kanatzidis, M. G. (2012). Characterization of thallium-based ternary semiconductor compounds for radiation detection. In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV [85070O] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8507). https://doi.org/10.1117/12.928325

Characterization of thallium-based ternary semiconductor compounds for radiation detection. / Liu, Zhifu; Peters, John A.; Nguyen, Sandy; Sebastian, Maria; Wessels, Bruce W.; Wang, Shichao; Jin, Hosub; Im, Jino; Freeman, Arthur J.; Kanatzidis, Mercouri G.

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV. 2012. 85070O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8507).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, Z, Peters, JA, Nguyen, S, Sebastian, M, Wessels, BW, Wang, S, Jin, H, Im, J, Freeman, AJ & Kanatzidis, MG 2012, Characterization of thallium-based ternary semiconductor compounds for radiation detection. in Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV., 85070O, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, San Diego, CA, United States, 8/13/12. https://doi.org/10.1117/12.928325

Liu, Zhifu ; Peters, John A. ; Nguyen, Sandy ; Sebastian, Maria ; Wessels, Bruce W. ; Wang, Shichao ; Jin, Hosub ; Im, Jino ; Freeman, Arthur J. ; Kanatzidis, Mercouri G. / Characterization of thallium-based ternary semiconductor compounds for radiation detection. Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Characterization of thallium-based ternary semiconductor compounds for radiation detection",

abstract = "We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.",

keywords = "Photoconductivity, Tl-chalcogenide, Wide gap semiconductor, X-ray detector",

author = "Zhifu Liu and Peters, {John A.} and Sandy Nguyen and Maria Sebastian and Wessels, {Bruce W.} and Shichao Wang and Hosub Jin and Jino Im and Freeman, {Arthur J.} and Kanatzidis, {Mercouri G.}",

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doi = "10.1117/12.928325",

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AU - Liu, Zhifu

AU - Peters, John A.

AU - Nguyen, Sandy

AU - Sebastian, Maria

AU - Wessels, Bruce W.

AU - Wang, Shichao

AU - Jin, Hosub

AU - Im, Jino

AU - Freeman, Arthur J.

AU - Kanatzidis, Mercouri G.

PY - 2012/12/1

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N2 - We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

AB - We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

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KW - Tl-chalcogenide

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KW - X-ray detector

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Characterization of thallium-based ternary semiconductor compounds for radiation detection

Abstract

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Keywords

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