Characterization of thallium-based ternary semiconductor compounds for radiation detection

Zhifu Liu, John A. Peters, Sandy Nguyen, Maria Sebastian, Bruce W. Wessels, Shichao Wang, Hosub Jin, Jino Im, Arthur J Freeman, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8507
DOIs
Publication statusPublished - 2012
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States
Duration: Aug 13 2012Aug 15 2012

Other

OtherHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
CountryUnited States
CitySan Diego, CA
Period8/13/128/15/12

Fingerprint

CdZnTe
Thallium
thallium
Ternary
Half line
Semiconductors
Lifetime
rays
Radiation
Semiconductor materials
X rays
life (durability)
Spectral Response
Crystal growth from melt
Bridgman method
Optical Absorption
Electronic Properties
room temperature
Band Gap
radiation

Keywords

  • Photoconductivity
  • Tl-chalcogenide
  • Wide gap semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Liu, Z., Peters, J. A., Nguyen, S., Sebastian, M., Wessels, B. W., Wang, S., ... Kanatzidis, M. G. (2012). Characterization of thallium-based ternary semiconductor compounds for radiation detection. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8507). [85070O] https://doi.org/10.1117/12.928325

Characterization of thallium-based ternary semiconductor compounds for radiation detection. / Liu, Zhifu; Peters, John A.; Nguyen, Sandy; Sebastian, Maria; Wessels, Bruce W.; Wang, Shichao; Jin, Hosub; Im, Jino; Freeman, Arthur J; Kanatzidis, Mercouri G.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507 2012. 85070O.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, Z, Peters, JA, Nguyen, S, Sebastian, M, Wessels, BW, Wang, S, Jin, H, Im, J, Freeman, AJ & Kanatzidis, MG 2012, Characterization of thallium-based ternary semiconductor compounds for radiation detection. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8507, 85070O, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, San Diego, CA, United States, 8/13/12. https://doi.org/10.1117/12.928325
Liu Z, Peters JA, Nguyen S, Sebastian M, Wessels BW, Wang S et al. Characterization of thallium-based ternary semiconductor compounds for radiation detection. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507. 2012. 85070O https://doi.org/10.1117/12.928325
Liu, Zhifu ; Peters, John A. ; Nguyen, Sandy ; Sebastian, Maria ; Wessels, Bruce W. ; Wang, Shichao ; Jin, Hosub ; Im, Jino ; Freeman, Arthur J ; Kanatzidis, Mercouri G. / Characterization of thallium-based ternary semiconductor compounds for radiation detection. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507 2012.
@inproceedings{3444488e81e34f4abb96185c5c1e718a,
title = "Characterization of thallium-based ternary semiconductor compounds for radiation detection",
abstract = "We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.",
keywords = "Photoconductivity, Tl-chalcogenide, Wide gap semiconductor, X-ray detector",
author = "Zhifu Liu and Peters, {John A.} and Sandy Nguyen and Maria Sebastian and Wessels, {Bruce W.} and Shichao Wang and Hosub Jin and Jino Im and Freeman, {Arthur J} and Kanatzidis, {Mercouri G}",
year = "2012",
doi = "10.1117/12.928325",
language = "English",
isbn = "9780819492241",
volume = "8507",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Characterization of thallium-based ternary semiconductor compounds for radiation detection

AU - Liu, Zhifu

AU - Peters, John A.

AU - Nguyen, Sandy

AU - Sebastian, Maria

AU - Wessels, Bruce W.

AU - Wang, Shichao

AU - Jin, Hosub

AU - Im, Jino

AU - Freeman, Arthur J

AU - Kanatzidis, Mercouri G

PY - 2012

Y1 - 2012

N2 - We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

AB - We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

KW - Photoconductivity

KW - Tl-chalcogenide

KW - Wide gap semiconductor

KW - X-ray detector

UR - http://www.scopus.com/inward/record.url?scp=84872951856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872951856&partnerID=8YFLogxK

U2 - 10.1117/12.928325

DO - 10.1117/12.928325

M3 - Conference contribution

AN - SCOPUS:84872951856

SN - 9780819492241

VL - 8507

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -