Abstract
We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 8507 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States Duration: Aug 13 2012 → Aug 15 2012 |
Other
| Other | Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 8/13/12 → 8/15/12 |
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Keywords
- Photoconductivity
- Tl-chalcogenide
- Wide gap semiconductor
- X-ray detector
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Characterization of thallium-based ternary semiconductor compounds for radiation detection. / Liu, Zhifu; Peters, John A.; Nguyen, Sandy; Sebastian, Maria; Wessels, Bruce W.; Wang, Shichao; Jin, Hosub; Im, Jino; Freeman, Arthur J; Kanatzidis, Mercouri G.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507 2012. 85070O.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of thallium-based ternary semiconductor compounds for radiation detection
AU - Liu, Zhifu
AU - Peters, John A.
AU - Nguyen, Sandy
AU - Sebastian, Maria
AU - Wessels, Bruce W.
AU - Wang, Shichao
AU - Jin, Hosub
AU - Im, Jino
AU - Freeman, Arthur J
AU - Kanatzidis, Mercouri G
PY - 2012
Y1 - 2012
N2 - We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.
AB - We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.
KW - Photoconductivity
KW - Tl-chalcogenide
KW - Wide gap semiconductor
KW - X-ray detector
UR - http://www.scopus.com/inward/record.url?scp=84872951856&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872951856&partnerID=8YFLogxK
U2 - 10.1117/12.928325
DO - 10.1117/12.928325
M3 - Conference contribution
SN - 9780819492241
VL - 8507
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -