Abstract
The electrical properties of individual p- and n-type silicon microwires have been investigated using a direct contact formation technique, in which an Ohmic contact between the tungsten probe and microwire was produced by applying mechanical force to the probe/microwire junction. This method alleviated the need for lithography or a high-temperature process to form a metal/Si ohmic contact. The technique was also used to characterize the Si microwire/conducting polymer junctions in a single cell of a membrane-supported bilayer Si microwire structure that is of interest for the direct production of fuels from sunlight. The data indicate that the combination of PEDOT-PSS-Nafion and highly doped Si microwires is suitable, from an electrical resistance perspective, to be used in a solar fuels generation device.
Original language | English |
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Pages (from-to) | 24945-24950 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry C |
Volume | 115 |
Issue number | 50 |
DOIs | |
Publication status | Published - Dec 22 2011 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films