Abstract
The electrical properties of individual p- and n-type silicon microwires have been investigated using a direct contact formation technique, in which an Ohmic contact between the tungsten probe and microwire was produced by applying mechanical force to the probe/microwire junction. This method alleviated the need for lithography or a high-temperature process to form a metal/Si ohmic contact. The technique was also used to characterize the Si microwire/conducting polymer junctions in a single cell of a membrane-supported bilayer Si microwire structure that is of interest for the direct production of fuels from sunlight. The data indicate that the combination of PEDOT-PSS-Nafion and highly doped Si microwires is suitable, from an electrical resistance perspective, to be used in a solar fuels generation device.
| Original language | English |
|---|---|
| Pages (from-to) | 24945-24950 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry C |
| Volume | 115 |
| Issue number | 50 |
| DOIs | |
| Publication status | Published - Dec 22 2011 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Energy(all)
Cite this
Characterization of the electrical properties of individual p-Si microwire/polymer/n-Si microwire assemblies. / Yahyaie, Iman; McEleney, Kevin; Walter, Michael G.; Oliver, Derek R.; Thomson, Douglas J.; Freund, Michael S.; Lewis, Nathan S.
In: Journal of Physical Chemistry C, Vol. 115, No. 50, 22.12.2011, p. 24945-24950.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of the electrical properties of individual p-Si microwire/polymer/n-Si microwire assemblies
AU - Yahyaie, Iman
AU - McEleney, Kevin
AU - Walter, Michael G.
AU - Oliver, Derek R.
AU - Thomson, Douglas J.
AU - Freund, Michael S.
AU - Lewis, Nathan S
PY - 2011/12/22
Y1 - 2011/12/22
N2 - The electrical properties of individual p- and n-type silicon microwires have been investigated using a direct contact formation technique, in which an Ohmic contact between the tungsten probe and microwire was produced by applying mechanical force to the probe/microwire junction. This method alleviated the need for lithography or a high-temperature process to form a metal/Si ohmic contact. The technique was also used to characterize the Si microwire/conducting polymer junctions in a single cell of a membrane-supported bilayer Si microwire structure that is of interest for the direct production of fuels from sunlight. The data indicate that the combination of PEDOT-PSS-Nafion and highly doped Si microwires is suitable, from an electrical resistance perspective, to be used in a solar fuels generation device.
AB - The electrical properties of individual p- and n-type silicon microwires have been investigated using a direct contact formation technique, in which an Ohmic contact between the tungsten probe and microwire was produced by applying mechanical force to the probe/microwire junction. This method alleviated the need for lithography or a high-temperature process to form a metal/Si ohmic contact. The technique was also used to characterize the Si microwire/conducting polymer junctions in a single cell of a membrane-supported bilayer Si microwire structure that is of interest for the direct production of fuels from sunlight. The data indicate that the combination of PEDOT-PSS-Nafion and highly doped Si microwires is suitable, from an electrical resistance perspective, to be used in a solar fuels generation device.
UR - http://www.scopus.com/inward/record.url?scp=84857290589&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84857290589&partnerID=8YFLogxK
U2 - 10.1021/jp2088719
DO - 10.1021/jp2088719
M3 - Article
AN - SCOPUS:84857290589
VL - 115
SP - 24945
EP - 24950
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 50
ER -