Charge accumulation at a threading edge dislocation in gallium nitride

K. Leung, A. F. Wright, E. B. Stechel

Research output: Contribution to journalArticle

134 Citations (Scopus)

Abstract

We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion at high dislocation density and the multitude of charge states, the line charge exhibits complex crossover behavior as the dopant and dislocation densities vary.

Original languageEnglish
Pages (from-to)2495-2497
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number17
DOIs
Publication statusPublished - Apr 26 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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