Abstract
Measurements have been made of the ion-fractions of H and 4He backscattered with energies of 25-160 keV from Cu, Au, and Si surfaces which were etched and washed but not atomically clean. The ion-fractions for H range from 0.37 at 25keV to 0.92 at 160 keV, and for 4He from 0.10 at 30keV to 0.58 at 150 keV, depending to a small extent on the target material. Where comparisons can be made the data agree rather closely with results of others for particles traversing thin foils. The data are useful for calibration of an electrostatic analyzer in surface analysis. Plots of ion-fraction against particle velocity show a primary dependence on velocity, as expected, but there is a small difference in slope between the H and He curves. Charge states of particles scattered from surface impurities did not deviate significantly from those of particles scattered from the substrate at the same energy.
| Original language | English |
|---|---|
| Pages (from-to) | 345-361 |
| Number of pages | 17 |
| Journal | Surface Science |
| Volume | 35 |
| Issue number | C |
| DOIs | |
| Publication status | Published - 1973 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Charge states of 25-150 keV H and 4He backscattered from solid surfaces. / Buck, T. M.; Wheatley, G. H.; Feldman, L. C.
In: Surface Science, Vol. 35, No. C, 1973, p. 345-361.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge states of 25-150 keV H and 4He backscattered from solid surfaces
AU - Buck, T. M.
AU - Wheatley, G. H.
AU - Feldman, L. C.
PY - 1973
Y1 - 1973
N2 - Measurements have been made of the ion-fractions of H and 4He backscattered with energies of 25-160 keV from Cu, Au, and Si surfaces which were etched and washed but not atomically clean. The ion-fractions for H range from 0.37 at 25keV to 0.92 at 160 keV, and for 4He from 0.10 at 30keV to 0.58 at 150 keV, depending to a small extent on the target material. Where comparisons can be made the data agree rather closely with results of others for particles traversing thin foils. The data are useful for calibration of an electrostatic analyzer in surface analysis. Plots of ion-fraction against particle velocity show a primary dependence on velocity, as expected, but there is a small difference in slope between the H and He curves. Charge states of particles scattered from surface impurities did not deviate significantly from those of particles scattered from the substrate at the same energy.
AB - Measurements have been made of the ion-fractions of H and 4He backscattered with energies of 25-160 keV from Cu, Au, and Si surfaces which were etched and washed but not atomically clean. The ion-fractions for H range from 0.37 at 25keV to 0.92 at 160 keV, and for 4He from 0.10 at 30keV to 0.58 at 150 keV, depending to a small extent on the target material. Where comparisons can be made the data agree rather closely with results of others for particles traversing thin foils. The data are useful for calibration of an electrostatic analyzer in surface analysis. Plots of ion-fraction against particle velocity show a primary dependence on velocity, as expected, but there is a small difference in slope between the H and He curves. Charge states of particles scattered from surface impurities did not deviate significantly from those of particles scattered from the substrate at the same energy.
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U2 - 10.1016/0039-6028(73)90224-0
DO - 10.1016/0039-6028(73)90224-0
M3 - Article
VL - 35
SP - 345
EP - 361
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - C
ER -