Charge-Transfer induced magnetic field effects of nano-carbon heterojunctions

Wei Qin, Maogang Gong, Tejas Shastry, Mark C Hersam, Shenqiang Ren

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Room temperature magnetic field effects have not been definitively observed in either single-walled carbon nanotubes (SWCNTs) or C 60 under a small magnetic field due to their weak hyperfine interaction and slight difference of g-factor between positive and negative polarons. Here, we demonstrate charge-transfer induced magnetic field effects in nano-carbon C 60-SWCNT bulk heterojunctions at room temperature, where the mechanism of magnetic field effects is verified using excited state transition modeling. By controlling SWCNT concentrations and interfacial interactions, nano-carbon heterojunctions exhibit tunability of charge-transfer density and room temperature magnetoconductance of 2.8% under 100â mT external magnetic field. External stimuli, such as electric field and photoexcitation, also play an important role in controlling the magnetic field effects of nano-carbon heterojunctions, which suggests that these findings could enable the control of optoelectronic properties of nano-carbon heterojunctions.

Original languageEnglish
Article number6126
JournalScientific Reports
Volume4
DOIs
Publication statusPublished - Aug 22 2014

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heterojunctions
charge transfer
carbon
magnetic fields
carbon nanotubes
room temperature
polarons
photoexcitation
stimuli
interactions
electric fields
excitation
temperature

ASJC Scopus subject areas

  • General

Cite this

Charge-Transfer induced magnetic field effects of nano-carbon heterojunctions. / Qin, Wei; Gong, Maogang; Shastry, Tejas; Hersam, Mark C; Ren, Shenqiang.

In: Scientific Reports, Vol. 4, 6126, 22.08.2014.

Research output: Contribution to journalArticle

Qin, Wei ; Gong, Maogang ; Shastry, Tejas ; Hersam, Mark C ; Ren, Shenqiang. / Charge-Transfer induced magnetic field effects of nano-carbon heterojunctions. In: Scientific Reports. 2014 ; Vol. 4.
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