Charge transfer rate constants for the reduction of cobaltocenium at accumulated n-Si electrodes

Ming X. Tan, Nathan S Lewis

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A theoretical description of heterogeneous charge transfer rate constants has been developed for accumulated semiconductor electrodes in contact with outer sphere redox couples. Analysis of the rate constants using a Fermi Golden Rule formalism in a non-adiabatic electron transfer framework has facilitated a theoretical comparison between the rate constants of metal and accumulated semiconductor electrodes in contact with a common electrolyte-redox couple solution. Chronoamperometric measurements of n-Si electrodes in contact with CH3OH-cobaltocenium (CoCp2)+-CoCp2 have been performed to investigate these predictions experimentally. A standard rate constant, ko, of (2-4) × 10-2 cm s-1 was obtained for n-SiAZH3OH-CoCp2 +/0 contacts, while the CoCp2 +/0 redox couple was found to be electrochemically reversible (ko > 0.1 cm s-1) at Hg electrodes under the same conditions.

Original languageEnglish
Pages (from-to)311-321
Number of pages11
JournalInorganica Chimica Acta
Volume242
Issue number1-2
Publication statusPublished - Feb 15 1996

Fingerprint

Charge transfer
Rate constants
Electrodes
charge transfer
Oxidation-Reduction
Semiconductors
electrodes
Semiconductor materials
Contacts (fluid mechanics)
Electrolytes
electron transfer
Metals
electrolytes
Electrons
formalism
predictions
metals

Keywords

  • Cobalt complexes
  • Cyclopentadienyl complexes
  • Electron transfer
  • Kinetics and mechanism
  • Reduction

ASJC Scopus subject areas

  • Biochemistry
  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

Charge transfer rate constants for the reduction of cobaltocenium at accumulated n-Si electrodes. / Tan, Ming X.; Lewis, Nathan S.

In: Inorganica Chimica Acta, Vol. 242, No. 1-2, 15.02.1996, p. 311-321.

Research output: Contribution to journalArticle

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