TY - JOUR
T1 - Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals
AU - Das, Sanjib
AU - Peters, John A.
AU - Lin, Wenwen
AU - Kostina, Svetlana S.
AU - Chen, Pice
AU - Kim, Joon Il
AU - Kanatzidis, Mercouri G.
AU - Wessels, Bruce W.
N1 - Funding Information:
This work made use of the Materials Processing and Microfabrication Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of Northwestern University. The authors would like to thank Dr. Zhifu Liu and Dr. Oleg Kontsevoi for technical discussions.
Publisher Copyright:
© 2017 American Chemical Society.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/4/6
Y1 - 2017/4/6
N2 - The chalcohalide compound Tl6SeI4 is a promising wide-bandgap semiconductor for efficient hard radiation detection at room temperature due to its high density, average atomic number and mobility-lifetime product. However, the nature of its charge transport kinetics, especially the role of defects in recombination, has not been examined in detail. To determine the charge transport kinetics in Tl6SeI4 single crystals, electrical conductivity and photoinduced current transient spectroscopy were measured over the temperature range 105-330 K. These measurements reveal the existence of multiple defect states with energy levels in the range 0.10-0.90 eV, within the bandgap of Tl6SeI4. Large persistent photoconductivity (PPC) is observed at low temperature that shows strong thermal quenching at 160 K. The quenching of PPC is described using a configuration coordinate model involving a deep level donor state, which is tentatively attributed to the presence of iodine vacancies or Si interstitial impurities.
AB - The chalcohalide compound Tl6SeI4 is a promising wide-bandgap semiconductor for efficient hard radiation detection at room temperature due to its high density, average atomic number and mobility-lifetime product. However, the nature of its charge transport kinetics, especially the role of defects in recombination, has not been examined in detail. To determine the charge transport kinetics in Tl6SeI4 single crystals, electrical conductivity and photoinduced current transient spectroscopy were measured over the temperature range 105-330 K. These measurements reveal the existence of multiple defect states with energy levels in the range 0.10-0.90 eV, within the bandgap of Tl6SeI4. Large persistent photoconductivity (PPC) is observed at low temperature that shows strong thermal quenching at 160 K. The quenching of PPC is described using a configuration coordinate model involving a deep level donor state, which is tentatively attributed to the presence of iodine vacancies or Si interstitial impurities.
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U2 - 10.1021/acs.jpclett.7b00336
DO - 10.1021/acs.jpclett.7b00336
M3 - Article
C2 - 28300409
AN - SCOPUS:85017171322
VL - 8
SP - 1538
EP - 1544
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
SN - 1948-7185
IS - 7
ER -