Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films

Jun Ni; Lian Wang; Yu Yang; He Yan; Shu Jin; Tobin J. Marks; John R. Ireland; Carl R. Kannewurf

doi:10.1021/ic0501364

Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In₂O₃ thin films

Jun Ni, Lian Wang, Yu Yang, He Yan, Shu Jin, Tobin J. Marks, John R. Ireland, Carl R. Kannewurf

Northwestern University

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Mg- and Sn-doped In₂O₃ (MgIn_xSn _yO_z, 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III) [In(dpm)₃], bis(2,4-pentanedionato)tin(II) [Sn(acac) ₂], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)₂(TMEDA)]. Films in this compositional range retain the cubic In₂O₃ bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn_14.3Sn _6.93O_z. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.

Original language	English
Pages (from-to)	6071-6076
Number of pages	6
Journal	Inorganic Chemistry
Volume	44
Issue number	17
DOIs	https://doi.org/10.1021/ic0501364
Publication status	Published - Aug 22 2005

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Inorganic Chemistry

Access to Document

10.1021/ic0501364

Fingerprint Dive into the research topics of 'Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In<sub>2</sub>O<sub>3</sub> thin films'. Together they form a unique fingerprint.

Cite this

@article{38b04d3b68b142f39ea3942cc667e9b5,

title = "Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films",

abstract = "Mg- and Sn-doped In2O3 (MgInxSn yOz, 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III) [In(dpm)3], bis(2,4-pentanedionato)tin(II) [Sn(acac) 2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn 6.93Oz. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.",

author = "Jun Ni and Lian Wang and Yu Yang and He Yan and Shu Jin and Marks, {Tobin J.} and Ireland, {John R.} and Kannewurf, {Carl R.}",

year = "2005",

month = aug,

day = "22",

doi = "10.1021/ic0501364",

language = "English",

volume = "44",

pages = "6071--6076",

journal = "Inorganic Chemistry",

issn = "0020-1669",

publisher = "American Chemical Society",

number = "17",

}

TY - JOUR

T1 - Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films

AU - Ni, Jun

AU - Wang, Lian

AU - Yang, Yu

AU - Yan, He

AU - Jin, Shu

AU - Marks, Tobin J.

AU - Ireland, John R.

AU - Kannewurf, Carl R.

PY - 2005/8/22

Y1 - 2005/8/22

N2 - Mg- and Sn-doped In2O3 (MgInxSn yOz, 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III) [In(dpm)3], bis(2,4-pentanedionato)tin(II) [Sn(acac) 2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn 6.93Oz. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.

AB - Mg- and Sn-doped In2O3 (MgInxSn yOz, 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III) [In(dpm)3], bis(2,4-pentanedionato)tin(II) [Sn(acac) 2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn 6.93Oz. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.

UR - http://www.scopus.com/inward/record.url?scp=24044492211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24044492211&partnerID=8YFLogxK

U2 - 10.1021/ic0501364

DO - 10.1021/ic0501364

M3 - Article

C2 - 16097827

AN - SCOPUS:24044492211

VL - 44

SP - 6071

EP - 6076

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 17