Abstract
Mg- and Sn-doped In2O3 (MgInxSn yOz, 6.0 <x <16.0; 3.0 <y <8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III) [In(dpm)3], bis(2,4-pentanedionato)tin(II) [Sn(acac) 2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn 6.93Oz. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.
| Original language | English |
|---|---|
| Pages (from-to) | 6071-6076 |
| Number of pages | 6 |
| Journal | Inorganic Chemistry |
| Volume | 44 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Aug 22 2005 |
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- Inorganic Chemistry
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Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films. / Ni, Jun; Wang, Lian; Yang, Yu; Yan, He; Jin, Shu; Marks, Tobin J; Ireland, John R.; Kannewurf, Carl R.
In: Inorganic Chemistry, Vol. 44, No. 17, 22.08.2005, p. 6071-6076.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films
AU - Ni, Jun
AU - Wang, Lian
AU - Yang, Yu
AU - Yan, He
AU - Jin, Shu
AU - Marks, Tobin J
AU - Ireland, John R.
AU - Kannewurf, Carl R.
PY - 2005/8/22
Y1 - 2005/8/22
N2 - Mg- and Sn-doped In2O3 (MgInxSn yOz, 6.0 3], bis(2,4-pentanedionato)tin(II) [Sn(acac) 2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn 6.93Oz. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.
AB - Mg- and Sn-doped In2O3 (MgInxSn yOz, 6.0 3], bis(2,4-pentanedionato)tin(II) [Sn(acac) 2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N′, N′-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be ∼1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn 6.93Oz. Annealing of such films in a vacuum raises the conductivity to ∼2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.
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U2 - 10.1021/ic0501364
DO - 10.1021/ic0501364
M3 - Article
VL - 44
SP - 6071
EP - 6076
JO - Inorganic Chemistry
JF - Inorganic Chemistry
SN - 0020-1669
IS - 17
ER -