Abstract
Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.
| Original language | English |
|---|---|
| Pages (from-to) | 327-329 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 73 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1998 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition. / Wang, Anchuan; Dai, Jiyan; Cheng, Jizhi; Chudzik, Michael P.; Marks, Tobin J; Chang, Robert P. H.; Kannewurf, Carl R.
In: Applied Physics Letters, Vol. 73, No. 3, 1998, p. 327-329.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition
AU - Wang, Anchuan
AU - Dai, Jiyan
AU - Cheng, Jizhi
AU - Chudzik, Michael P.
AU - Marks, Tobin J
AU - Chang, Robert P. H.
AU - Kannewurf, Carl R.
PY - 1998
Y1 - 1998
N2 - Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.
AB - Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.
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U2 - 10.1063/1.121823
DO - 10.1063/1.121823
M3 - Article
AN - SCOPUS:0343285596
VL - 73
SP - 327
EP - 329
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
ER -