Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition

Anchuan Wang, Jiyan Dai, Jizhi Cheng, Michael P. Chudzik, Tobin J Marks, Robert P. H. Chang, Carl R. Kannewurf

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Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.

Original languageEnglish
Pages (from-to)327-329
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1998


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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