Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition

Anchuan Wang; Jiyan Dai; Jizhi Cheng; Michael P. Chudzik; Tobin J Marks; Robert P. H. Chang; Carl R. Kannewurf

doi:10.1063/1.121823

Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition

Anchuan Wang, Jiyan Dai, Jizhi Cheng, Michael P. Chudzik, Tobin J Marks, Robert P. H. Chang, Carl R. Kannewurf

Northwestern University

Research output: Contribution to journal › Article › peer-review

120 Citations (Scopus)

Abstract

Indium-zinc oxide films (Zn_xIn_yO_x+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)₃ and Zn(TMHD)₂ (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×10²⁰cm³; mobility=18.6cm²/Vs; dσ/dT2O₃, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered Zn_kIn₂O_3+k phase precipitated in a cubic In₂O₃:Zn matrix.

Original language	English
Pages (from-to)	327-329
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	3
DOIs	https://doi.org/10.1063/1.121823
Publication status	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.121823

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Wang, A., Dai, J., Cheng, J., Chudzik, M. P., Marks, T. J., Chang, R. P. H., & Kannewurf, C. R. (1998). Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition. Applied Physics Letters, 73(3), 327-329. https://doi.org/10.1063/1.121823

Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition. / Wang, Anchuan; Dai, Jiyan; Cheng, Jizhi; Chudzik, Michael P.; Marks, Tobin J ; Chang, Robert P. H.; Kannewurf, Carl R.

In: Applied Physics Letters, Vol. 73, No. 3, 1998, p. 327-329.

Research output: Contribution to journal › Article › peer-review

Wang, A, Dai, J, Cheng, J, Chudzik, MP, Marks, TJ , Chang, RPH & Kannewurf, CR 1998, 'Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition', Applied Physics Letters, vol. 73, no. 3, pp. 327-329. https://doi.org/10.1063/1.121823

Wang, Anchuan ; Dai, Jiyan ; Cheng, Jizhi ; Chudzik, Michael P. ; Marks, Tobin J ; Chang, Robert P. H. ; Kannewurf, Carl R. / Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition. In: Applied Physics Letters. 1998 ; Vol. 73, No. 3. pp. 327-329.

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abstract = "Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50{\AA}) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.",

author = "Anchuan Wang and Jiyan Dai and Jizhi Cheng and Chudzik, {Michael P.} and Marks, {Tobin J} and Chang, {Robert P. H.} and Kannewurf, {Carl R.}",

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AU - Chudzik, Michael P.

AU - Marks, Tobin J

AU - Chang, Robert P. H.

AU - Kannewurf, Carl R.

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N2 - Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.

AB - Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.

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