Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition

Anchuan Wang, Jiyan Dai, Jizhi Cheng, Michael P. Chudzik, Tobin J Marks, Robert P. H. Chang, Carl R. Kannewurf

Research output: Contribution to journalArticle

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Abstract

Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.

Original languageEnglish
Pages (from-to)327-329
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number3
DOIs
Publication statusPublished - 1998

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zinc oxides
indium oxides
metalorganic chemical vapor deposition
oxide films
low pressure
microstructure
high resolution
x rays
roughness
conductivity
transmission electron microscopy
oxides
matrices
diffraction
metals
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition. / Wang, Anchuan; Dai, Jiyan; Cheng, Jizhi; Chudzik, Michael P.; Marks, Tobin J; Chang, Robert P. H.; Kannewurf, Carl R.

In: Applied Physics Letters, Vol. 73, No. 3, 1998, p. 327-329.

Research output: Contribution to journalArticle

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AU - Dai, Jiyan

AU - Cheng, Jizhi

AU - Chudzik, Michael P.

AU - Marks, Tobin J

AU - Chang, Robert P. H.

AU - Kannewurf, Carl R.

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AB - Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.

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