Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang Jun Baeg; Myung Gil Kim; Charles K. Song; Xinge Yu; Antonio Facchetti; Tobin J. Marks

doi:10.1002/adma.201401354

Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang Jun Baeg, Myung Gil Kim, Charles K. Song, Xinge Yu, Antonio Facchetti, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO₂) as a charge-trapping layer. Because of the facile reduction of Cu²⁺ to Cu¹⁺, Cu-ZrO₂ thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In₂O₃ and an indium-gallium oxide).

Original language	English
Pages (from-to)	7170-7177
Number of pages	8
Journal	Advanced Materials
Volume	26
Issue number	42
DOIs	https://doi.org/10.1002/adma.201401354
Publication status	Published - Nov 1 2014

Keywords

amorphous oxides
data storage
dielectrics
self-assembly
semiconductors
thin films

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201401354

Fingerprint Dive into the research topics of 'Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites'. Together they form a unique fingerprint.

Cite this

@article{8d6845305de44f5088240d584af6d092,

title = "Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites",

abstract = "A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).",

keywords = "amorphous oxides, data storage, dielectrics, self-assembly, semiconductors, thin films",

author = "Baeg, {Kang Jun} and Kim, {Myung Gil} and Song, {Charles K.} and Xinge Yu and Antonio Facchetti and Marks, {Tobin J.}",

year = "2014",

month = nov,

day = "1",

doi = "10.1002/adma.201401354",

language = "English",

volume = "26",

pages = "7170--7177",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "42",

}

TY - JOUR

T1 - Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

AU - Baeg, Kang Jun

AU - Kim, Myung Gil

AU - Song, Charles K.

AU - Yu, Xinge

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

AB - A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

KW - amorphous oxides

KW - data storage

KW - dielectrics

KW - self-assembly

KW - semiconductors

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=84941092573&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941092573&partnerID=8YFLogxK

U2 - 10.1002/adma.201401354

DO - 10.1002/adma.201401354

M3 - Article

AN - SCOPUS:84941092573

VL - 26

SP - 7170

EP - 7177

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 42

ER -