Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang Jun Baeg, Myung Gil Kim, Charles K. Song, Xinge Yu, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

Original languageEnglish
Pages (from-to)7170-7177
Number of pages8
JournalAdvanced Materials
Volume26
Issue number42
DOIs
Publication statusPublished - Nov 1 2014

Fingerprint

Charge trapping
Indium
Flash memory
Copper oxides
Gallium
Thin film transistors
Zirconia
Oxides
Copper
Solid solutions
Transistors
Metals
Data storage equipment
Thin films
Composite materials
Oxide semiconductors
zirconium oxide
gallium oxide

Keywords

  • amorphous oxides
  • data storage
  • dielectrics
  • self-assembly
  • semiconductors
  • thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites. / Baeg, Kang Jun; Kim, Myung Gil; Song, Charles K.; Yu, Xinge; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 26, No. 42, 01.11.2014, p. 7170-7177.

Research output: Contribution to journalArticle

Baeg, Kang Jun ; Kim, Myung Gil ; Song, Charles K. ; Yu, Xinge ; Facchetti, Antonio ; Marks, Tobin J. / Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites. In: Advanced Materials. 2014 ; Vol. 26, No. 42. pp. 7170-7177.
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