Abstract
A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).
| Original language | English |
|---|---|
| Pages (from-to) | 7170-7177 |
| Number of pages | 8 |
| Journal | Advanced Materials |
| Volume | 26 |
| Issue number | 42 |
| DOIs | |
| Publication status | Published - Nov 1 2014 |
Keywords
- amorphous oxides
- data storage
- dielectrics
- self-assembly
- semiconductors
- thin films
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Baeg, K. J., Kim, M. G., Song, C. K., Yu, X., Facchetti, A., & Marks, T. J. (2014). Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites. Advanced Materials, 26(42), 7170-7177. https://doi.org/10.1002/adma.201401354