Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang Jun Baeg; Myung Gil Kim; Charles K. Song; Xinge Yu; Antonio Facchetti; Tobin J. Marks

doi:10.1002/adma.201401354

Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang Jun Baeg, Myung Gil Kim, Charles K. Song, Xinge Yu, Antonio Facchetti, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO₂) as a charge-trapping layer. Because of the facile reduction of Cu²⁺ to Cu¹⁺, Cu-ZrO₂ thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In₂O₃ and an indium-gallium oxide).

Original language	English
Pages (from-to)	7170-7177
Number of pages	8
Journal	Advanced Materials
Volume	26
Issue number	42
DOIs	https://doi.org/10.1002/adma.201401354
Publication status	Published - Nov 1 2014

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Keywords

amorphous oxides
data storage
dielectrics
self-assembly
semiconductors
thin films

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

Baeg, K. J., Kim, M. G., Song, C. K., Yu, X., Facchetti, A., & Marks, T. J. (2014). Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites. Advanced Materials, 26(42), 7170-7177. https://doi.org/10.1002/adma.201401354

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Access to Document

10.1002/adma.201401354