Abstract
A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).
Original language | English |
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Pages (from-to) | 7170-7177 |
Number of pages | 8 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 42 |
DOIs | |
Publication status | Published - Nov 1 2014 |
Keywords
- amorphous oxides
- data storage
- dielectrics
- self-assembly
- semiconductors
- thin films
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering