Abstract
A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).
| Original language | English |
|---|---|
| Pages (from-to) | 7170-7177 |
| Number of pages | 8 |
| Journal | Advanced Materials |
| Volume | 26 |
| Issue number | 42 |
| DOIs | |
| Publication status | Published - Nov 1 2014 |
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Keywords
- amorphous oxides
- data storage
- dielectrics
- self-assembly
- semiconductors
- thin films
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites. / Baeg, Kang Jun; Kim, Myung Gil; Song, Charles K.; Yu, Xinge; Facchetti, Antonio; Marks, Tobin J.
In: Advanced Materials, Vol. 26, No. 42, 01.11.2014, p. 7170-7177.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites
AU - Baeg, Kang Jun
AU - Kim, Myung Gil
AU - Song, Charles K.
AU - Yu, Xinge
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2014/11/1
Y1 - 2014/11/1
N2 - A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).
AB - A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).
KW - amorphous oxides
KW - data storage
KW - dielectrics
KW - self-assembly
KW - semiconductors
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=84941092573&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84941092573&partnerID=8YFLogxK
U2 - 10.1002/adma.201401354
DO - 10.1002/adma.201401354
M3 - Article
AN - SCOPUS:84941092573
VL - 26
SP - 7170
EP - 7177
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 42
ER -