Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides

Rajan Arora; John Rozen; Daniel M. Fleetwood; Kenneth F. Galloway; C. Xuan Zhang; Jisheng Han; Sima Dimitrijev; Fred Kong; Leonard C. Feldman; Sokrates T. Pantelides; Ronald D. Schrimpf

doi:10.1109/TNS.2009.2031604

Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides

Rajan Arora, John Rozen, Daniel M. Fleetwood, Kenneth F. Galloway, C. Xuan Zhang, Jisheng Han, Sima Dimitrijev, Fred Kong, Leonard C. Feldman, Sokrates T. Pantelides, Ronald D. Schrimpf

Rutgers University

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO₂ gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

Original language	English
Article number	5341380
Pages (from-to)	3185-3191
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	56
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2009.2031604
Publication status	Published - Dec 2009

Keywords

3C-SiC
4H-SiC
MOS
N2 o
No
Poa

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. / Arora, Rajan; Rozen, John; Fleetwood, Daniel M.; Galloway, Kenneth F.; Xuan Zhang, C.; Han, Jisheng; Dimitrijev, Sima; Kong, Fred; Feldman, Leonard C.; Pantelides, Sokrates T.; Schrimpf, Ronald D.

In: IEEE Transactions on Nuclear Science, Vol. 56, No. 6, 5341380, 12.2009, p. 3185-3191.

Research output: Contribution to journal › Article › peer-review

Arora, Rajan ; Rozen, John ; Fleetwood, Daniel M. ; Galloway, Kenneth F. ; Xuan Zhang, C. ; Han, Jisheng ; Dimitrijev, Sima ; Kong, Fred ; Feldman, Leonard C. ; Pantelides, Sokrates T. ; Schrimpf, Ronald D. / Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. In: IEEE Transactions on Nuclear Science. 2009 ; Vol. 56, No. 6. pp. 3185-3191.

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title = "Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides",

abstract = "Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.",

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note = "Funding Information: Manuscript received July 17, 2009; revised August 25, 2009. Current version published December 09, 2009. This work was supported in part by the U.S. Air Force Office of Scientific Research (AFOSR) through the MURI program and in part by U.S. Army Research Grants W911NF-07-2-0046 and W56HZV-06-C-0228.",

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