Abstract
Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.
| Original language | English |
|---|---|
| Article number | 5341380 |
| Pages (from-to) | 3185-3191 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 56 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Dec 2009 |
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Keywords
- 3C-SiC
- 4H-SiC
- MOS
- N2 o
- No
- Poa
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering
- Nuclear and High Energy Physics
Cite this
Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. / Arora, Rajan; Rozen, John; Fleetwood, Daniel M.; Galloway, Kenneth F.; Xuan Zhang, C.; Han, Jisheng; Dimitrijev, Sima; Kong, Fred; Feldman, Leonard C; Pantelides, Sokrates T.; Schrimpf, Ronald D.
In: IEEE Transactions on Nuclear Science, Vol. 56, No. 6, 5341380, 12.2009, p. 3185-3191.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides
AU - Arora, Rajan
AU - Rozen, John
AU - Fleetwood, Daniel M.
AU - Galloway, Kenneth F.
AU - Xuan Zhang, C.
AU - Han, Jisheng
AU - Dimitrijev, Sima
AU - Kong, Fred
AU - Feldman, Leonard C
AU - Pantelides, Sokrates T.
AU - Schrimpf, Ronald D.
PY - 2009/12
Y1 - 2009/12
N2 - Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.
AB - Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.
KW - 3C-SiC
KW - 4H-SiC
KW - MOS
KW - N2 o
KW - No
KW - Poa
UR - http://www.scopus.com/inward/record.url?scp=72349089720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=72349089720&partnerID=8YFLogxK
U2 - 10.1109/TNS.2009.2031604
DO - 10.1109/TNS.2009.2031604
M3 - Article
AN - SCOPUS:72349089720
VL - 56
SP - 3185
EP - 3191
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6
M1 - 5341380
ER -