Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides

Rajan Arora, John Rozen, Daniel M. Fleetwood, Kenneth F. Galloway, C. Xuan Zhang, Jisheng Han, Sima Dimitrijev, Fred Kong, Leonard C Feldman, Sokrates T. Pantelides, Ronald D. Schrimpf

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

Original languageEnglish
Article number5341380
Pages (from-to)3185-3191
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number6
DOIs
Publication statusPublished - Dec 2009

Fingerprint

MOS capacitors
Charge trapping
capacitors
trapping
Nitrogen
nitrogen
Oxides
oxides
Gate dielectrics
Ionizing radiation
Silicon carbide
silicon carbides
ionizing radiation
traps
Substrates

Keywords

  • 3C-SiC
  • 4H-SiC
  • MOS
  • N2 o
  • No
  • Poa

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Arora, R., Rozen, J., Fleetwood, D. M., Galloway, K. F., Xuan Zhang, C., Han, J., ... Schrimpf, R. D. (2009). Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. IEEE Transactions on Nuclear Science, 56(6), 3185-3191. [5341380]. https://doi.org/10.1109/TNS.2009.2031604

Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. / Arora, Rajan; Rozen, John; Fleetwood, Daniel M.; Galloway, Kenneth F.; Xuan Zhang, C.; Han, Jisheng; Dimitrijev, Sima; Kong, Fred; Feldman, Leonard C; Pantelides, Sokrates T.; Schrimpf, Ronald D.

In: IEEE Transactions on Nuclear Science, Vol. 56, No. 6, 5341380, 12.2009, p. 3185-3191.

Research output: Contribution to journal › Article

Arora, R, Rozen, J, Fleetwood, DM, Galloway, KF, Xuan Zhang, C, Han, J, Dimitrijev, S, Kong, F, Feldman, LC, Pantelides, ST & Schrimpf, RD 2009, 'Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides', IEEE Transactions on Nuclear Science, vol. 56, no. 6, 5341380, pp. 3185-3191. https://doi.org/10.1109/TNS.2009.2031604
Arora R, Rozen J, Fleetwood DM, Galloway KF, Xuan Zhang C, Han J et al. Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. IEEE Transactions on Nuclear Science. 2009 Dec;56(6):3185-3191. 5341380. https://doi.org/10.1109/TNS.2009.2031604
Arora, Rajan ; Rozen, John ; Fleetwood, Daniel M. ; Galloway, Kenneth F. ; Xuan Zhang, C. ; Han, Jisheng ; Dimitrijev, Sima ; Kong, Fred ; Feldman, Leonard C ; Pantelides, Sokrates T. ; Schrimpf, Ronald D. / Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. In: IEEE Transactions on Nuclear Science. 2009 ; Vol. 56, No. 6. pp. 3185-3191.
@article{a39c54b5e2a941fcbae2f1d319fff128,
title = "Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides",
abstract = "Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.",
keywords = "3C-SiC, 4H-SiC, MOS, N2 o, No, Poa",
author = "Rajan Arora and John Rozen and Fleetwood, {Daniel M.} and Galloway, {Kenneth F.} and {Xuan Zhang}, C. and Jisheng Han and Sima Dimitrijev and Fred Kong and Feldman, {Leonard C} and Pantelides, {Sokrates T.} and Schrimpf, {Ronald D.}",
year = "2009",
month = "12",
doi = "10.1109/TNS.2009.2031604",
language = "English",
volume = "56",
pages = "3185--3191",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides

AU - Arora, Rajan

AU - Rozen, John

AU - Fleetwood, Daniel M.

AU - Galloway, Kenneth F.

AU - Xuan Zhang, C.

AU - Han, Jisheng

AU - Dimitrijev, Sima

AU - Kong, Fred

AU - Feldman, Leonard C

AU - Pantelides, Sokrates T.

AU - Schrimpf, Ronald D.

PY - 2009/12

Y1 - 2009/12

N2 - Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

AB - Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

KW - 3C-SiC

KW - 4H-SiC

KW - MOS

KW - N2 o

KW - No

KW - Poa

UR - http://www.scopus.com/inward/record.url?scp=72349089720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72349089720&partnerID=8YFLogxK

U2 - 10.1109/TNS.2009.2031604

DO - 10.1109/TNS.2009.2031604

M3 - Article

VL - 56

SP - 3185

EP - 3191

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

M1 - 5341380

ER -

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