Abstract
Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.
Original language | English |
---|---|
Article number | 5341380 |
Pages (from-to) | 3185-3191 |
Number of pages | 7 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 56 |
Issue number | 6 |
DOIs | |
Publication status | Published - Dec 2009 |
Keywords
- 3C-SiC
- 4H-SiC
- MOS
- N2 o
- No
- Poa
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering