Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides

Rajan Arora, John Rozen, Daniel M. Fleetwood, Kenneth F. Galloway, C. Xuan Zhang, Jisheng Han, Sima Dimitrijev, Fred Kong, Leonard C Feldman, Sokrates T. Pantelides, Ronald D. Schrimpf

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

Original languageEnglish
Article number5341380
Pages (from-to)3185-3191
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number6
DOIs
Publication statusPublished - Dec 2009

    Fingerprint

Keywords

  • 3C-SiC
  • 4H-SiC
  • MOS
  • N2 o
  • No
  • Poa

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Arora, R., Rozen, J., Fleetwood, D. M., Galloway, K. F., Xuan Zhang, C., Han, J., ... Schrimpf, R. D. (2009). Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. IEEE Transactions on Nuclear Science, 56(6), 3185-3191. [5341380]. https://doi.org/10.1109/TNS.2009.2031604