Chemical Limit to Semiconductor Device Miniaturization

Igor Lubomirsky, David Cahen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Dopant flux in a semiconductor junction due to chemical diffusion and drift (electromigration) was analyzed as a possible determining factor for device life expectancy at room temperature. Simple relations are derived and/or recalled to allow estimates of lifetimes. They are shown to be appropriate for III-V heterojunction bipolar transistors. We suggest that this chemical factor must be considered for compound semiconductor devices, as their dimensions shrink.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number3
Publication statusPublished - Mar 1999

Fingerprint

miniaturization
Semiconductor devices
semiconductor devices
Semiconductor junctions
semiconductor junctions
Electromigration
electromigration
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Doping (additives)
Fluxes
life (durability)
room temperature
estimates
Temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Chemical Limit to Semiconductor Device Miniaturization. / Lubomirsky, Igor; Cahen, David.

In: Electrochemical and Solid-State Letters, Vol. 2, No. 3, 03.1999, p. 154-156.

Research output: Contribution to journalArticle

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