Chemical Limit to Semiconductor Device Miniaturization

Igor Lubomirsky, David Cahen

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Dopant flux in a semiconductor junction due to chemical diffusion and drift (electromigration) was analyzed as a possible determining factor for device life expectancy at room temperature. Simple relations are derived and/or recalled to allow estimates of lifetimes. They are shown to be appropriate for III-V heterojunction bipolar transistors. We suggest that this chemical factor must be considered for compound semiconductor devices, as their dimensions shrink.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number3
Publication statusPublished - Mar 1999

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

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