CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL.

Bruce J. Tufts, Ian L. Abrahams, Patrick G. Santangelo, Gail N. Ryba, Louis G. Casagrande, Nathan S Lewis

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The minimization of interfacial recombination losses is a key factor in the operation of any semiconductor-based solar-energy-conversion device, including solid-state junctions, semiconductor/liquid junctions and colloidal suspensions of semiconductors. A frequently cited advantage of semiconductor/liquid junctions is the ability to manipulate surface recombination rates by chemical reactions. A notable example is the improvement in current-voltage properties of n-GaAs photoanodes which have been exposed to aqueous solutions of Ru**3** plus ions. Here we report new surface-modification procedures for GaAs which have produced the most efficient photoelectrochemical cell reported to date. We also report experiments which indicate that the current-voltage improvements in this system are accompanied by increased interfacial hole transfer rates at the GaAs/liquid interface.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalNature
Volume326
Issue number6116
Publication statusPublished - Jan 1 1987

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solar cells
liquids
semiconductor junctions
solid state devices
solar energy conversion
electric potential
colloids
chemical reactions
aqueous solutions
optimization
cells
ions

ASJC Scopus subject areas

  • General

Cite this

Tufts, B. J., Abrahams, I. L., Santangelo, P. G., Ryba, G. N., Casagrande, L. G., & Lewis, N. S. (1987). CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL. Nature, 326(6116), 861-863.

CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL. / Tufts, Bruce J.; Abrahams, Ian L.; Santangelo, Patrick G.; Ryba, Gail N.; Casagrande, Louis G.; Lewis, Nathan S.

In: Nature, Vol. 326, No. 6116, 01.01.1987, p. 861-863.

Research output: Contribution to journalArticle

Tufts, BJ, Abrahams, IL, Santangelo, PG, Ryba, GN, Casagrande, LG & Lewis, NS 1987, 'CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL.', Nature, vol. 326, no. 6116, pp. 861-863.
Tufts BJ, Abrahams IL, Santangelo PG, Ryba GN, Casagrande LG, Lewis NS. CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL. Nature. 1987 Jan 1;326(6116):861-863.
Tufts, Bruce J. ; Abrahams, Ian L. ; Santangelo, Patrick G. ; Ryba, Gail N. ; Casagrande, Louis G. ; Lewis, Nathan S. / CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL. In: Nature. 1987 ; Vol. 326, No. 6116. pp. 861-863.
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