The minimization of interfacial recombination losses is a key factor in the operation of any semiconductor-based solar-energy-conversion device, including solid-state junctions, semiconductor/liquid junctions and colloidal suspensions of semiconductors. A frequently cited advantage of semiconductor/liquid junctions is the ability to manipulate surface recombination rates by chemical reactions. A notable example is the improvement in current-voltage properties of n-GaAs photoanodes which have been exposed to aqueous solutions of Ru**3** plus ions. Here we report new surface-modification procedures for GaAs which have produced the most efficient photoelectrochemical cell reported to date. We also report experiments which indicate that the current-voltage improvements in this system are accompanied by increased interfacial hole transfer rates at the GaAs/liquid interface.
|Number of pages||3|
|Publication status||Published - Jan 1 1987|
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