CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL.

Bruce J. Tufts, Ian L. Abrahams, Patrick G. Santangelo, Gail N. Ryba, Louis G. Casagrande, Nathan S Lewis

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49 Citations (Scopus)

Abstract

The minimization of interfacial recombination losses is a key factor in the operation of any semiconductor-based solar-energy-conversion device, including solid-state junctions, semiconductor/liquid junctions and colloidal suspensions of semiconductors. A frequently cited advantage of semiconductor/liquid junctions is the ability to manipulate surface recombination rates by chemical reactions. A notable example is the improvement in current-voltage properties of n-GaAs photoanodes which have been exposed to aqueous solutions of Ru**3** plus ions. Here we report new surface-modification procedures for GaAs which have produced the most efficient photoelectrochemical cell reported to date. We also report experiments which indicate that the current-voltage improvements in this system are accompanied by increased interfacial hole transfer rates at the GaAs/liquid interface.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalNature
Volume326
Issue number6116
Publication statusPublished - Jan 1 1987

ASJC Scopus subject areas

  • General

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    Tufts, B. J., Abrahams, I. L., Santangelo, P. G., Ryba, G. N., Casagrande, L. G., & Lewis, N. S. (1987). CHEMICAL MODIFICATION OF n-GaAs ELECTRODES WITH Os**3** plus GIVES A 15% EFFICIENT SOLAR CELL. Nature, 326(6116), 861-863.