Chemical modification of n-GaAs photoanodes with group VIIIB metal ions

Stability in contact with 1.0 M KOH(aq)-0.10 M K2Se(aq) solutions and I-V properties in contact with 1.0 M KOH(aq)-0.3 M K2Te(aq) electrolytes

Ming X. Tan, Charlotte Newcomb, Amit Kumar, Sharon R. Lunt, Michael J. Sailor, Bruce J. Tufts, Nathan S Lewis

Research output: Contribution to journalArticle

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Abstract

A quantitative study has been performed on the stability of GaAs surfaces to photoanodic corrosion in contact with the 1.0 M KOH(aq)-0.10 M K2Se(aq)-0.01 M K2Se2(aq) electrolyte. In this electrolyte, chemically etched n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se2-(aq). Chemisorption of group VIIIB metal ions, including complexes of Co(III), Os(III), and Ru(III), onto the etched GaAs surface yielded improved current-voltage (I-V) behavior of the GaAs photoanode and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se2- donor species, as opposed to the passivation of nonradiative surface recombination. Related experiments on n-GaAs photoanodes in contact with the 1.0 M KOH(aq)-0.3 M Te2-(aq)-0.01 M Te22-(aq) electrolyte have also been performed. The I-V properties of n-GaAs, p-GaAs, and Sn-doped In2O3 electrodes have been investigated in this electrolyte, and these measurements have been used to elucidate common mechanistic features of charge-transfer reactions for the Se2-(aq) and Te2-(aq) redox systems.

Original languageEnglish
Pages (from-to)10133-10142
Number of pages10
JournalJournal of Physical Chemistry
Volume95
Issue number24
Publication statusPublished - 1991

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Chemical modification
Contacts (fluid mechanics)
Electrolytes
Metal ions
metal ions
electrolytes
Electric potential
electric potential
Charge transfer
charge transfer
Electrodes
electrodes
Chemisorption
Passivation
chemisorption
passivity
corrosion
Corrosion
gallium arsenide
Experiments

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Chemical modification of n-GaAs photoanodes with group VIIIB metal ions : Stability in contact with 1.0 M KOH(aq)-0.10 M K2Se(aq) solutions and I-V properties in contact with 1.0 M KOH(aq)-0.3 M K2Te(aq) electrolytes. / Tan, Ming X.; Newcomb, Charlotte; Kumar, Amit; Lunt, Sharon R.; Sailor, Michael J.; Tufts, Bruce J.; Lewis, Nathan S.

In: Journal of Physical Chemistry, Vol. 95, No. 24, 1991, p. 10133-10142.

Research output: Contribution to journalArticle

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abstract = "A quantitative study has been performed on the stability of GaAs surfaces to photoanodic corrosion in contact with the 1.0 M KOH(aq)-0.10 M K2Se(aq)-0.01 M K2Se2(aq) electrolyte. In this electrolyte, chemically etched n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se2-(aq). Chemisorption of group VIIIB metal ions, including complexes of Co(III), Os(III), and Ru(III), onto the etched GaAs surface yielded improved current-voltage (I-V) behavior of the GaAs photoanode and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se2- donor species, as opposed to the passivation of nonradiative surface recombination. Related experiments on n-GaAs photoanodes in contact with the 1.0 M KOH(aq)-0.3 M Te2-(aq)-0.01 M Te22-(aq) electrolyte have also been performed. The I-V properties of n-GaAs, p-GaAs, and Sn-doped In2O3 electrodes have been investigated in this electrolyte, and these measurements have been used to elucidate common mechanistic features of charge-transfer reactions for the Se2-(aq) and Te2-(aq) redox systems.",
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AU - Tan, Ming X.

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AU - Sailor, Michael J.

AU - Tufts, Bruce J.

AU - Lewis, Nathan S

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N2 - A quantitative study has been performed on the stability of GaAs surfaces to photoanodic corrosion in contact with the 1.0 M KOH(aq)-0.10 M K2Se(aq)-0.01 M K2Se2(aq) electrolyte. In this electrolyte, chemically etched n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se2-(aq). Chemisorption of group VIIIB metal ions, including complexes of Co(III), Os(III), and Ru(III), onto the etched GaAs surface yielded improved current-voltage (I-V) behavior of the GaAs photoanode and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se2- donor species, as opposed to the passivation of nonradiative surface recombination. Related experiments on n-GaAs photoanodes in contact with the 1.0 M KOH(aq)-0.3 M Te2-(aq)-0.01 M Te22-(aq) electrolyte have also been performed. The I-V properties of n-GaAs, p-GaAs, and Sn-doped In2O3 electrodes have been investigated in this electrolyte, and these measurements have been used to elucidate common mechanistic features of charge-transfer reactions for the Se2-(aq) and Te2-(aq) redox systems.

AB - A quantitative study has been performed on the stability of GaAs surfaces to photoanodic corrosion in contact with the 1.0 M KOH(aq)-0.10 M K2Se(aq)-0.01 M K2Se2(aq) electrolyte. In this electrolyte, chemically etched n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se2-(aq). Chemisorption of group VIIIB metal ions, including complexes of Co(III), Os(III), and Ru(III), onto the etched GaAs surface yielded improved current-voltage (I-V) behavior of the GaAs photoanode and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se2- donor species, as opposed to the passivation of nonradiative surface recombination. Related experiments on n-GaAs photoanodes in contact with the 1.0 M KOH(aq)-0.3 M Te2-(aq)-0.01 M Te22-(aq) electrolyte have also been performed. The I-V properties of n-GaAs, p-GaAs, and Sn-doped In2O3 electrodes have been investigated in this electrolyte, and these measurements have been used to elucidate common mechanistic features of charge-transfer reactions for the Se2-(aq) and Te2-(aq) redox systems.

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