Chemical reduction and wet etching of CeO2 thin films

A. Kossoy, M. Greenberg, K. Gartsman, Igor Lubomirsky

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Cerium oxide is stable to commonly used aqueous etching agents and can be reliably etched only by a combination of chlorine and fluorine plasma. This hinders practical applications of pure and doped ceria thin films in bulk and surface micromachining. In the present work, the reasons for the chemical stability of cerium oxide in aqueous media were analyzed and two etching solutions were investigated. In the absence of stirring, the etching rate dropped with time. In an ultrasonic bath, etching was isotropic with a constant rate of ∼10 nm/min. This permits patterning of ceria films using chromium as a mask and demonstrates practical applicability of the proposed etching solutions.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume152
Issue number2
DOIs
Publication statusPublished - 2005

Fingerprint

Wet etching
Etching
etching
Thin films
thin films
cerium oxides
Cerium compounds
Cerium
Surface micromachining
Oxides
Fluorine
Chlorine
Chemical stability
Chromium
stirring
micromachining
chlorine
fluorine
Masks
baths

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chemical reduction and wet etching of CeO2 thin films. / Kossoy, A.; Greenberg, M.; Gartsman, K.; Lubomirsky, Igor.

In: Journal of the Electrochemical Society, Vol. 152, No. 2, 2005.

Research output: Contribution to journalArticle

Kossoy, A. ; Greenberg, M. ; Gartsman, K. ; Lubomirsky, Igor. / Chemical reduction and wet etching of CeO2 thin films. In: Journal of the Electrochemical Society. 2005 ; Vol. 152, No. 2.
@article{138dc363885246be9df8fb3176ffe873,
title = "Chemical reduction and wet etching of CeO2 thin films",
abstract = "Cerium oxide is stable to commonly used aqueous etching agents and can be reliably etched only by a combination of chlorine and fluorine plasma. This hinders practical applications of pure and doped ceria thin films in bulk and surface micromachining. In the present work, the reasons for the chemical stability of cerium oxide in aqueous media were analyzed and two etching solutions were investigated. In the absence of stirring, the etching rate dropped with time. In an ultrasonic bath, etching was isotropic with a constant rate of ∼10 nm/min. This permits patterning of ceria films using chromium as a mask and demonstrates practical applicability of the proposed etching solutions.",
author = "A. Kossoy and M. Greenberg and K. Gartsman and Igor Lubomirsky",
year = "2005",
doi = "10.1149/1.1850371",
language = "English",
volume = "152",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

TY - JOUR

T1 - Chemical reduction and wet etching of CeO2 thin films

AU - Kossoy, A.

AU - Greenberg, M.

AU - Gartsman, K.

AU - Lubomirsky, Igor

PY - 2005

Y1 - 2005

N2 - Cerium oxide is stable to commonly used aqueous etching agents and can be reliably etched only by a combination of chlorine and fluorine plasma. This hinders practical applications of pure and doped ceria thin films in bulk and surface micromachining. In the present work, the reasons for the chemical stability of cerium oxide in aqueous media were analyzed and two etching solutions were investigated. In the absence of stirring, the etching rate dropped with time. In an ultrasonic bath, etching was isotropic with a constant rate of ∼10 nm/min. This permits patterning of ceria films using chromium as a mask and demonstrates practical applicability of the proposed etching solutions.

AB - Cerium oxide is stable to commonly used aqueous etching agents and can be reliably etched only by a combination of chlorine and fluorine plasma. This hinders practical applications of pure and doped ceria thin films in bulk and surface micromachining. In the present work, the reasons for the chemical stability of cerium oxide in aqueous media were analyzed and two etching solutions were investigated. In the absence of stirring, the etching rate dropped with time. In an ultrasonic bath, etching was isotropic with a constant rate of ∼10 nm/min. This permits patterning of ceria films using chromium as a mask and demonstrates practical applicability of the proposed etching solutions.

UR - http://www.scopus.com/inward/record.url?scp=14744269254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14744269254&partnerID=8YFLogxK

U2 - 10.1149/1.1850371

DO - 10.1149/1.1850371

M3 - Article

AN - SCOPUS:14744269254

VL - 152

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -