Chemical state of phosphorous at the SiC/SiO 2 interface

E. Pitthan, V. P. Amarasinghe, C. Xu, A. L. Gobbi, G. H.S. Dartora, T. Gustafsson, Leonard C Feldman, F. C. Stedile

Research output: Contribution to journalArticle

Abstract

The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO 2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO 2 films containing phosphorus were deposited by sputtering on both the Si and C-faces of SiC substrates, and on silicon (Si(100)) substrates. After oxide removal by etching, a significant amount of phosphorus was retained on both SiC surfaces, while no phosphorus was observed on the Si surface. Chemical ambient investigation, quantification by XPS, and water contact angle measurements indicate that the phosphorus on the SiC surface is trivalent bonded, mainly to oxygen. Based on these results, a SiO 2 /SiC interfacial structure is proposed: Si-C-Si-|-O-P-O 2 -SiO 2 . These results provide new insights into the role of phosphorus, its incorporation, and stability, as a passivating agent in the performance of SiC MOS structures.

Original languageEnglish
Pages (from-to)172-176
Number of pages5
JournalThin Solid Films
Volume675
DOIs
Publication statusPublished - Apr 1 2019

Fingerprint

Phosphorus
phosphorus
Silicon
Substrates
Angle measurement
Oxides
Contact angle
Sputtering
Etching
Monolayers
X ray photoelectron spectroscopy
sputtering
etching
Impurities
Oxygen
impurities
oxides
Water
silicon
oxygen

Keywords

  • Metal-oxide-semiconductor structure
  • Phosphorus incorporation
  • Silicon carbide surface
  • Sputtering deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Pitthan, E., Amarasinghe, V. P., Xu, C., Gobbi, A. L., Dartora, G. H. S., Gustafsson, T., ... Stedile, F. C. (2019). Chemical state of phosphorous at the SiC/SiO 2 interface Thin Solid Films, 675, 172-176. https://doi.org/10.1016/j.tsf.2019.02.038

Chemical state of phosphorous at the SiC/SiO 2 interface . / Pitthan, E.; Amarasinghe, V. P.; Xu, C.; Gobbi, A. L.; Dartora, G. H.S.; Gustafsson, T.; Feldman, Leonard C; Stedile, F. C.

In: Thin Solid Films, Vol. 675, 01.04.2019, p. 172-176.

Research output: Contribution to journalArticle

Pitthan, E, Amarasinghe, VP, Xu, C, Gobbi, AL, Dartora, GHS, Gustafsson, T, Feldman, LC & Stedile, FC 2019, ' Chemical state of phosphorous at the SiC/SiO 2 interface ', Thin Solid Films, vol. 675, pp. 172-176. https://doi.org/10.1016/j.tsf.2019.02.038
Pitthan E, Amarasinghe VP, Xu C, Gobbi AL, Dartora GHS, Gustafsson T et al. Chemical state of phosphorous at the SiC/SiO 2 interface Thin Solid Films. 2019 Apr 1;675:172-176. https://doi.org/10.1016/j.tsf.2019.02.038
Pitthan, E. ; Amarasinghe, V. P. ; Xu, C. ; Gobbi, A. L. ; Dartora, G. H.S. ; Gustafsson, T. ; Feldman, Leonard C ; Stedile, F. C. / Chemical state of phosphorous at the SiC/SiO 2 interface In: Thin Solid Films. 2019 ; Vol. 675. pp. 172-176.
@article{9bd1f9a92fc34f5d9c4306a5caa1a34c,
title = "Chemical state of phosphorous at the SiC/SiO 2 interface",
abstract = "The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO 2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO 2 films containing phosphorus were deposited by sputtering on both the Si and C-faces of SiC substrates, and on silicon (Si(100)) substrates. After oxide removal by etching, a significant amount of phosphorus was retained on both SiC surfaces, while no phosphorus was observed on the Si surface. Chemical ambient investigation, quantification by XPS, and water contact angle measurements indicate that the phosphorus on the SiC surface is trivalent bonded, mainly to oxygen. Based on these results, a SiO 2 /SiC interfacial structure is proposed: Si-C-Si-|-O-P-O 2 -SiO 2 . These results provide new insights into the role of phosphorus, its incorporation, and stability, as a passivating agent in the performance of SiC MOS structures.",
keywords = "Metal-oxide-semiconductor structure, Phosphorus incorporation, Silicon carbide surface, Sputtering deposition",
author = "E. Pitthan and Amarasinghe, {V. P.} and C. Xu and Gobbi, {A. L.} and Dartora, {G. H.S.} and T. Gustafsson and Feldman, {Leonard C} and Stedile, {F. C.}",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.tsf.2019.02.038",
language = "English",
volume = "675",
pages = "172--176",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Chemical state of phosphorous at the SiC/SiO 2 interface

AU - Pitthan, E.

AU - Amarasinghe, V. P.

AU - Xu, C.

AU - Gobbi, A. L.

AU - Dartora, G. H.S.

AU - Gustafsson, T.

AU - Feldman, Leonard C

AU - Stedile, F. C.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO 2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO 2 films containing phosphorus were deposited by sputtering on both the Si and C-faces of SiC substrates, and on silicon (Si(100)) substrates. After oxide removal by etching, a significant amount of phosphorus was retained on both SiC surfaces, while no phosphorus was observed on the Si surface. Chemical ambient investigation, quantification by XPS, and water contact angle measurements indicate that the phosphorus on the SiC surface is trivalent bonded, mainly to oxygen. Based on these results, a SiO 2 /SiC interfacial structure is proposed: Si-C-Si-|-O-P-O 2 -SiO 2 . These results provide new insights into the role of phosphorus, its incorporation, and stability, as a passivating agent in the performance of SiC MOS structures.

AB - The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO 2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO 2 films containing phosphorus were deposited by sputtering on both the Si and C-faces of SiC substrates, and on silicon (Si(100)) substrates. After oxide removal by etching, a significant amount of phosphorus was retained on both SiC surfaces, while no phosphorus was observed on the Si surface. Chemical ambient investigation, quantification by XPS, and water contact angle measurements indicate that the phosphorus on the SiC surface is trivalent bonded, mainly to oxygen. Based on these results, a SiO 2 /SiC interfacial structure is proposed: Si-C-Si-|-O-P-O 2 -SiO 2 . These results provide new insights into the role of phosphorus, its incorporation, and stability, as a passivating agent in the performance of SiC MOS structures.

KW - Metal-oxide-semiconductor structure

KW - Phosphorus incorporation

KW - Silicon carbide surface

KW - Sputtering deposition

UR - http://www.scopus.com/inward/record.url?scp=85062290869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062290869&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.02.038

DO - 10.1016/j.tsf.2019.02.038

M3 - Article

VL - 675

SP - 172

EP - 176

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -