Chemical vapor deposition of HfO2 films on Si(100)

S. Sayan, S. Aravamudhan, B. W. Busch, W. H. Schulte, F. Cosandey, G. D. Wilk, T. Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

Original languageEnglish
Pages (from-to)507-512
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number2
DOIs
Publication statusPublished - Mar 2002

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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    Sayan, S., Aravamudhan, S., Busch, B. W., Schulte, W. H., Cosandey, F., Wilk, G. D., Gustafsson, T., & Garfunkel, E. (2002). Chemical vapor deposition of HfO2 films on Si(100). Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 20(2), 507-512. https://doi.org/10.1116/1.1450584