An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|Publication status||Published - Mar 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films