CHEMICALLY DERIVATIZED SEMICONDUCTOR PHOTOELECTRODES - A TECHNIQUE FOR THE STABILIZATION OF n-TYPE SEMICONDUCTORS.

Mark S. Wrighton, Andrew B. Bocarsly, Jeffrey M. Bolts, Mark G. Bradley, Alan B. Fischer, Nathan S Lewis, Michael C. Palazzotto, Erick G. Walton

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.

Original languageEnglish
Pages (from-to)269-294
Number of pages26
JournalAdvances in Chemistry Series
Publication statusPublished - 1980

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Stabilization
Semiconductor materials
Oxidation
Electrodes
Reducing Agents
Energy conversion
Charge transfer
Irradiation
Decomposition
Kinetics
Electrons
ferrocene
dichlorosilane

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wrighton, M. S., Bocarsly, A. B., Bolts, J. M., Bradley, M. G., Fischer, A. B., Lewis, N. S., ... Walton, E. G. (1980). CHEMICALLY DERIVATIZED SEMICONDUCTOR PHOTOELECTRODES - A TECHNIQUE FOR THE STABILIZATION OF n-TYPE SEMICONDUCTORS. Advances in Chemistry Series, 269-294.

CHEMICALLY DERIVATIZED SEMICONDUCTOR PHOTOELECTRODES - A TECHNIQUE FOR THE STABILIZATION OF n-TYPE SEMICONDUCTORS. / Wrighton, Mark S.; Bocarsly, Andrew B.; Bolts, Jeffrey M.; Bradley, Mark G.; Fischer, Alan B.; Lewis, Nathan S; Palazzotto, Michael C.; Walton, Erick G.

In: Advances in Chemistry Series, 1980, p. 269-294.

Research output: Contribution to journalArticle

Wrighton, MS, Bocarsly, AB, Bolts, JM, Bradley, MG, Fischer, AB, Lewis, NS, Palazzotto, MC & Walton, EG 1980, 'CHEMICALLY DERIVATIZED SEMICONDUCTOR PHOTOELECTRODES - A TECHNIQUE FOR THE STABILIZATION OF n-TYPE SEMICONDUCTORS.', Advances in Chemistry Series, pp. 269-294.
Wrighton, Mark S. ; Bocarsly, Andrew B. ; Bolts, Jeffrey M. ; Bradley, Mark G. ; Fischer, Alan B. ; Lewis, Nathan S ; Palazzotto, Michael C. ; Walton, Erick G. / CHEMICALLY DERIVATIZED SEMICONDUCTOR PHOTOELECTRODES - A TECHNIQUE FOR THE STABILIZATION OF n-TYPE SEMICONDUCTORS. In: Advances in Chemistry Series. 1980 ; pp. 269-294.
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abstract = "Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.",
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AU - Bocarsly, Andrew B.

AU - Bolts, Jeffrey M.

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N2 - Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.

AB - Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.

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