Abstract
Cuprous oxide (Cu2O) films have been grown on single-crystal MgO(110) substrates by a chemical vapor deposition process in the temperature range 690-790 °C. X-ray diffraction measurements show that phase-pure, highly oriented Cu2O films form at these temperatures. The Cu2O films are observed to grow by an island-formation mechanism on this substrate. Films grown at 690 °C uniformly coat the substrate except for micropores between grains. However, at a growth temperature of 790 °C, an isolated, three-dimensional island morphology develops. Using a transmission electron microscopy and atomic force microscope, both dome- and hut-shaped islands are observed and are shown to be coherent and epitaxial. The isolated, coherent islands form under high mobility growth conditions where geometric strain relaxation occurs before misfit dislocation can be introduced. This rare observation for oxides is attributed to the relatively weak bonding of Cu2O, which also has a relatively low melting temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 2408-2414 |
| Number of pages | 7 |
| Journal | Journal of Materials Research |
| Volume | 16 |
| Issue number | 8 |
| Publication status | Published - Aug 2001 |
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- Materials Science(all)
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Coherent island formation of Cu2O films grown by chemical vapor deposition on MgO(110). / Markworth, P. R.; Liu, X.; Dai, J. Y.; Fan, W.; Marks, Tobin J; Chang, Robert P. H.
In: Journal of Materials Research, Vol. 16, No. 8, 08.2001, p. 2408-2414.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Coherent island formation of Cu2O films grown by chemical vapor deposition on MgO(110)
AU - Markworth, P. R.
AU - Liu, X.
AU - Dai, J. Y.
AU - Fan, W.
AU - Marks, Tobin J
AU - Chang, Robert P. H.
PY - 2001/8
Y1 - 2001/8
N2 - Cuprous oxide (Cu2O) films have been grown on single-crystal MgO(110) substrates by a chemical vapor deposition process in the temperature range 690-790 °C. X-ray diffraction measurements show that phase-pure, highly oriented Cu2O films form at these temperatures. The Cu2O films are observed to grow by an island-formation mechanism on this substrate. Films grown at 690 °C uniformly coat the substrate except for micropores between grains. However, at a growth temperature of 790 °C, an isolated, three-dimensional island morphology develops. Using a transmission electron microscopy and atomic force microscope, both dome- and hut-shaped islands are observed and are shown to be coherent and epitaxial. The isolated, coherent islands form under high mobility growth conditions where geometric strain relaxation occurs before misfit dislocation can be introduced. This rare observation for oxides is attributed to the relatively weak bonding of Cu2O, which also has a relatively low melting temperature.
AB - Cuprous oxide (Cu2O) films have been grown on single-crystal MgO(110) substrates by a chemical vapor deposition process in the temperature range 690-790 °C. X-ray diffraction measurements show that phase-pure, highly oriented Cu2O films form at these temperatures. The Cu2O films are observed to grow by an island-formation mechanism on this substrate. Films grown at 690 °C uniformly coat the substrate except for micropores between grains. However, at a growth temperature of 790 °C, an isolated, three-dimensional island morphology develops. Using a transmission electron microscopy and atomic force microscope, both dome- and hut-shaped islands are observed and are shown to be coherent and epitaxial. The isolated, coherent islands form under high mobility growth conditions where geometric strain relaxation occurs before misfit dislocation can be introduced. This rare observation for oxides is attributed to the relatively weak bonding of Cu2O, which also has a relatively low melting temperature.
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M3 - Article
VL - 16
SP - 2408
EP - 2414
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 8
ER -