Cold cathode electron emission properties of nanocrystalline diamond thin films

A. R. Krauss, T. G. McCauley, D. M. Gruen, M. Ding, T. Corrigan, O. Auciello, Robert P. H. Chang, M. Kordesch, R. Nemanich, S. English, A. Breskin, E. Shefer, R. Chechyk, Y. Lifshitz, E. Grossman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
PublisherIEEE
Pages186-187
Number of pages2
Publication statusPublished - 1998
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: Jul 19 1998Jul 24 1998

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period7/19/987/24/98

Fingerprint

cold cathodes
electron emission
diamonds
thresholds
thin films
topography
photoelectric emission
grain size
microwaves
electric fields
augmentation
electronics

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Krauss, A. R., McCauley, T. G., Gruen, D. M., Ding, M., Corrigan, T., Auciello, O., ... Grossman, E. (1998). Cold cathode electron emission properties of nanocrystalline diamond thin films. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 186-187). IEEE.

Cold cathode electron emission properties of nanocrystalline diamond thin films. / Krauss, A. R.; McCauley, T. G.; Gruen, D. M.; Ding, M.; Corrigan, T.; Auciello, O.; Chang, Robert P. H.; Kordesch, M.; Nemanich, R.; English, S.; Breskin, A.; Shefer, E.; Chechyk, R.; Lifshitz, Y.; Grossman, E.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, 1998. p. 186-187.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krauss, AR, McCauley, TG, Gruen, DM, Ding, M, Corrigan, T, Auciello, O, Chang, RPH, Kordesch, M, Nemanich, R, English, S, Breskin, A, Shefer, E, Chechyk, R, Lifshitz, Y & Grossman, E 1998, Cold cathode electron emission properties of nanocrystalline diamond thin films. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, pp. 186-187, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.
Krauss AR, McCauley TG, Gruen DM, Ding M, Corrigan T, Auciello O et al. Cold cathode electron emission properties of nanocrystalline diamond thin films. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE. 1998. p. 186-187
Krauss, A. R. ; McCauley, T. G. ; Gruen, D. M. ; Ding, M. ; Corrigan, T. ; Auciello, O. ; Chang, Robert P. H. ; Kordesch, M. ; Nemanich, R. ; English, S. ; Breskin, A. ; Shefer, E. ; Chechyk, R. ; Lifshitz, Y. ; Grossman, E. / Cold cathode electron emission properties of nanocrystalline diamond thin films. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, 1998. pp. 186-187
@inproceedings{59c0eaa20fab4c649e7707818c6169e1,
title = "Cold cathode electron emission properties of nanocrystalline diamond thin films",
abstract = "Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.",
author = "Krauss, {A. R.} and McCauley, {T. G.} and Gruen, {D. M.} and M. Ding and T. Corrigan and O. Auciello and Chang, {Robert P. H.} and M. Kordesch and R. Nemanich and S. English and A. Breskin and E. Shefer and R. Chechyk and Y. Lifshitz and E. Grossman",
year = "1998",
language = "English",
pages = "186--187",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - Cold cathode electron emission properties of nanocrystalline diamond thin films

AU - Krauss, A. R.

AU - McCauley, T. G.

AU - Gruen, D. M.

AU - Ding, M.

AU - Corrigan, T.

AU - Auciello, O.

AU - Chang, Robert P. H.

AU - Kordesch, M.

AU - Nemanich, R.

AU - English, S.

AU - Breskin, A.

AU - Shefer, E.

AU - Chechyk, R.

AU - Lifshitz, Y.

AU - Grossman, E.

PY - 1998

Y1 - 1998

N2 - Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.

AB - Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.

UR - http://www.scopus.com/inward/record.url?scp=0032307897&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032307897&partnerID=8YFLogxK

M3 - Conference contribution

SP - 186

EP - 187

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

ER -