Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility P- and N-channel polymer semiconductors

Hui Huang, Zhihua Chen, Rocio Ponce Ortiz, Christopher Newman, Hakan Usta, Sylvia Lou, Jangdae Youn, Yong Young Noh, Kang Jun Baeg, Lin X. Chen, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

129 Citations (Scopus)

Abstract

Understanding the relationship between molecular/macromolecular architecture and organic thin film transistor (TFT) performance is essential for realizing next-generation high-performance organic electronics. In this regard, planar π-conjugated, electron-neutral (i.e., neither highly electron-rich nor highly electron-deficient) building blocks represent a major goal for polymeric semiconductors, however their realization presents synthetic challenges. Here we report that an easily accessible (minimal synthetic steps), electron-neutral thienyl-vinylene (TVT)-based building block having weak intramolecular S•••O "conformational locks" affords a new class of stable, structurally planar, solution-processable, high-mobility, molecular, and macromolecular semiconductors. The attraction of merging the weak TVT electron richness with supramolecular planarization is evident in the DFT-computed electronic structures, favorable MO energetics, X-ray diffraction-derived molecular structures, experimental lattice coehesion metrics, and excellent TFT performance. TVT-based polymer TFTs exhibit stable carrier mobilities in air as high as 0.5 and 0.05 cm 2/V•s (n- and p-type, respectively). All-TVT polymer-based complementary inverter circuitry exhibiting high voltage gains (∼50) and ring oscillator circuitry with high f osc(∼1.25 kHz) is readily fabricated from these materials by simple inkjet printing.

Original languageEnglish
Pages (from-to)10966-10973
Number of pages8
JournalJournal of the American Chemical Society
Volume134
Issue number26
DOIs
Publication statusPublished - Jul 4 2012

Fingerprint

Semiconductors
Polymers
Electrons
Semiconductor materials
Thin film transistors
Printing
Carrier mobility
Molecular Structure
Merging
Discrete Fourier transforms
X-Ray Diffraction
Molecular structure
Electronic structure
Electronic equipment
Air
X ray diffraction
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility P- and N-channel polymer semiconductors. / Huang, Hui; Chen, Zhihua; Ortiz, Rocio Ponce; Newman, Christopher; Usta, Hakan; Lou, Sylvia; Youn, Jangdae; Noh, Yong Young; Baeg, Kang Jun; Chen, Lin X.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 134, No. 26, 04.07.2012, p. 10966-10973.

Research output: Contribution to journalArticle

Huang, Hui ; Chen, Zhihua ; Ortiz, Rocio Ponce ; Newman, Christopher ; Usta, Hakan ; Lou, Sylvia ; Youn, Jangdae ; Noh, Yong Young ; Baeg, Kang Jun ; Chen, Lin X. ; Facchetti, Antonio ; Marks, Tobin J. / Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility P- and N-channel polymer semiconductors. In: Journal of the American Chemical Society. 2012 ; Vol. 134, No. 26. pp. 10966-10973.
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