COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR BEAM EPITAXIALLY GROWN Ge//xSi//1// minus //xFILMS ON Si(100).

A. T. Fiory, J. C. Bean, Leonard C Feldman, I. K. Robinson

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

The transition between commensurate and incommensurate growth of Ge//xSi//1// minus //x alloys on Si is observed directly by means of ion channeling and x-ray diffraction measurements. Molecular beam epitaxial films of thickness h up to 2500 A thick show commensurate epitaxy for x APP 1STH 50% and h APP GRTH h//c, a critical thickness dependent upon x. The observed values of h//c are discussed in terms of a model invoking the maximum theoretical interfacial shear strength and a barrier to misfit dislocation formation.

Original languageEnglish
Pages (from-to)1227-1229
Number of pages3
JournalJournal of Applied Physics
Volume56
Issue number4
DOIs
Publication statusPublished - Jan 1 1984

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molecular beams
shear strength
epitaxy
x ray diffraction
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR BEAM EPITAXIALLY GROWN Ge//xSi//1// minus //xFILMS ON Si(100). / Fiory, A. T.; Bean, J. C.; Feldman, Leonard C; Robinson, I. K.

In: Journal of Applied Physics, Vol. 56, No. 4, 01.01.1984, p. 1227-1229.

Research output: Contribution to journalArticle

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