Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

K. McDonald, M. B. Huang, R. A. Weller, Leonard C Feldman, J. R. Williams, F. C. Stedile, I. J R Baumvol, C. Radtke

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Abstract

The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

Original languageEnglish
Pages (from-to)568-570
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
Publication statusPublished - Jan 31 2000

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nitrogen
annealing
static pressure
nuclear reactions
vapor phases
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

McDonald, K., Huang, M. B., Weller, R. A., Feldman, L. C., Williams, J. R., Stedile, F. C., ... Radtke, C. (2000). Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters, 76(5), 568-570.

Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. / McDonald, K.; Huang, M. B.; Weller, R. A.; Feldman, Leonard C; Williams, J. R.; Stedile, F. C.; Baumvol, I. J R; Radtke, C.

In: Applied Physics Letters, Vol. 76, No. 5, 31.01.2000, p. 568-570.

Research output: Contribution to journalArticle

McDonald, K, Huang, MB, Weller, RA, Feldman, LC, Williams, JR, Stedile, FC, Baumvol, IJR & Radtke, C 2000, 'Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures', Applied Physics Letters, vol. 76, no. 5, pp. 568-570.
McDonald K, Huang MB, Weller RA, Feldman LC, Williams JR, Stedile FC et al. Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters. 2000 Jan 31;76(5):568-570.
McDonald, K. ; Huang, M. B. ; Weller, R. A. ; Feldman, Leonard C ; Williams, J. R. ; Stedile, F. C. ; Baumvol, I. J R ; Radtke, C. / Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. In: Applied Physics Letters. 2000 ; Vol. 76, No. 5. pp. 568-570.
@article{4c9f104ea86143e0961870b1479fb204,
title = "Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures",
abstract = "The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5{\%}. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.",
author = "K. McDonald and Huang, {M. B.} and Weller, {R. A.} and Feldman, {Leonard C} and Williams, {J. R.} and Stedile, {F. C.} and Baumvol, {I. J R} and C. Radtke",
year = "2000",
month = "1",
day = "31",
language = "English",
volume = "76",
pages = "568--570",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

AU - McDonald, K.

AU - Huang, M. B.

AU - Weller, R. A.

AU - Feldman, Leonard C

AU - Williams, J. R.

AU - Stedile, F. C.

AU - Baumvol, I. J R

AU - Radtke, C.

PY - 2000/1/31

Y1 - 2000/1/31

N2 - The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

AB - The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

UR - http://www.scopus.com/inward/record.url?scp=0001587519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001587519&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001587519

VL - 76

SP - 568

EP - 570

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -