Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

K. McDonald; M. B. Huang; R. A. Weller; L. C. Feldman; J. R. Williams; F. C. Stedile; I. J.R. Baumvol; C. Radtke

doi:10.1063/1.125819

Comparison of nitrogen incorporation in SiO₂/SiC and SiO₂/Si structures

K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J.R. Baumvol, C. Radtke

Rutgers University

Research output: Contribution to journal › Review article › peer-review

45 Citations (Scopus)

Abstract

The nitrogen content of SiO₂/SiC (4H) structures annealed in NO and N₂O has been measured using nuclear reaction analysis. Samples were annealed in ¹⁵N¹⁸O or ¹⁵N₂O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N₂O incorporates ∼10¹³ cm^-2 of N and annealing in NO incorporates ∼10¹⁴ cm^-2, both of which are an order of magnitude lower than in SiO₂/Si. In the NO anneal, N is predominantly incorporated near the SiO₂/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO₂/Si, two features are observed in SiO₂/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO₂/SiC is similar to SiO₂/Si, but there is a large difference in the incorporation of N at the interface.

Original language	English
Pages (from-to)	568-570
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	5
DOIs	https://doi.org/10.1063/1.125819
Publication status	Published - Jan 31 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures",

abstract = "The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.",

author = "K. McDonald and Huang, {M. B.} and Weller, {R. A.} and Feldman, {L. C.} and Williams, {J. R.} and Stedile, {F. C.} and Baumvol, {I. J.R.} and C. Radtke",

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T1 - Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

AU - McDonald, K.

AU - Huang, M. B.

AU - Weller, R. A.

AU - Feldman, L. C.

AU - Williams, J. R.

AU - Stedile, F. C.

AU - Baumvol, I. J.R.

AU - Radtke, C.

PY - 2000/1/31

Y1 - 2000/1/31

N2 - The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

AB - The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

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DO - 10.1063/1.125819

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