Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

K. McDonald; M. B. Huang; R. A. Weller; L. C. Feldman; J. R. Williams; F. C. Stedile; I. J.R. Baumvol; C. Radtke

doi:10.1063/1.125819

Comparison of nitrogen incorporation in SiO₂/SiC and SiO₂/Si structures

K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J.R. Baumvol, C. Radtke

Rutgers University

Research output: Contribution to journal › Review article

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Abstract

The nitrogen content of SiO₂/SiC (4H) structures annealed in NO and N₂O has been measured using nuclear reaction analysis. Samples were annealed in ¹⁵N¹⁸O or ¹⁵N₂O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N₂O incorporates ∼10¹³ cm^-2 of N and annealing in NO incorporates ∼10¹⁴ cm^-2, both of which are an order of magnitude lower than in SiO₂/Si. In the NO anneal, N is predominantly incorporated near the SiO₂/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO₂/Si, two features are observed in SiO₂/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO₂/SiC is similar to SiO₂/Si, but there is a large difference in the incorporation of N at the interface.

Original language	English
Pages (from-to)	568-570
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	5
DOIs	https://doi.org/10.1063/1.125819
Publication status	Published - Jan 31 2000

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

McDonald, K., Huang, M. B., Weller, R. A., Feldman, L. C., Williams, J. R., Stedile, F. C., Baumvol, I. J. R., & Radtke, C. (2000). Comparison of nitrogen incorporation in SiO₂/SiC and SiO₂/Si structures. Applied Physics Letters, 76(5), 568-570. https://doi.org/10.1063/1.125819

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abstract = "The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.",

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AU - McDonald, K.

AU - Huang, M. B.

AU - Weller, R. A.

AU - Feldman, L. C.

AU - Williams, J. R.

AU - Stedile, F. C.

AU - Baumvol, I. J.R.

AU - Radtke, C.

PY - 2000/1/31

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N2 - The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

AB - The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

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10.1063/1.125819