Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J.R. Baumvol, C. Radtke

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45 Citations (Scopus)

Abstract

The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm-2 of N and annealing in NO incorporates ∼1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal; a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

Original languageEnglish
Pages (from-to)568-570
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
DOIs
Publication statusPublished - Jan 31 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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