Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth

D. A. Tucker, Dong Kyun Seo, M. H. Whangbo, F. R. Sivazlian, B. R. Stoner, S. P. Bozeman, A. T. Sowers, R. J. Nemanich, J. T. Glass

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We carried out experimental and theoretical studies aimed at probing interface interactions of diamond with Si, Ni, and Ni3Si substrates. Oriented diamond films deposited on (100) silicon were characterized by polar Raman, polar XRD, and cross-sectional HRTEM. These studies show that the diamond-(100)/Si(100) interface does not adopt the 45°-rotation but the 3 : 2-match arrangement. Our extended Hückel tight-binding (EHTB) electronic structure calculations for a model system show that the interface interaction favors the 3 : 2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles while, under the same growth conditions, largely graphite was formed on the nickel substrate. Our EHTB electronic structure calculations for model systems show that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond-nucleation over graphite-nucleation, but this is not the case for the (111) and (100) surfaces of Ni.

Original languageEnglish
Pages (from-to)179-194
Number of pages16
JournalSurface Science
Volume334
Issue number1-3
DOIs
Publication statusPublished - Jul 10 1995

Fingerprint

Diamond
Silicon
Nickel
Diamonds
diamonds
nickel
Graphite
silicon
Substrates
Electronic structure
Nucleation
graphite
nucleation
electronic structure
Diamond films
diamond films
interactions
nickel silicide

Keywords

  • Diamond
  • Epitaxy
  • Nickel
  • Polycrystalline thin films
  • Semi-empirical models and model calculations
  • Silicon

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Physical and Theoretical Chemistry

Cite this

Tucker, D. A., Seo, D. K., Whangbo, M. H., Sivazlian, F. R., Stoner, B. R., Bozeman, S. P., ... Glass, J. T. (1995). Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth. Surface Science, 334(1-3), 179-194. https://doi.org/10.1016/0039-6028(95)00469-6

Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth. / Tucker, D. A.; Seo, Dong Kyun; Whangbo, M. H.; Sivazlian, F. R.; Stoner, B. R.; Bozeman, S. P.; Sowers, A. T.; Nemanich, R. J.; Glass, J. T.

In: Surface Science, Vol. 334, No. 1-3, 10.07.1995, p. 179-194.

Research output: Contribution to journalArticle

Tucker, DA, Seo, DK, Whangbo, MH, Sivazlian, FR, Stoner, BR, Bozeman, SP, Sowers, AT, Nemanich, RJ & Glass, JT 1995, 'Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth', Surface Science, vol. 334, no. 1-3, pp. 179-194. https://doi.org/10.1016/0039-6028(95)00469-6
Tucker, D. A. ; Seo, Dong Kyun ; Whangbo, M. H. ; Sivazlian, F. R. ; Stoner, B. R. ; Bozeman, S. P. ; Sowers, A. T. ; Nemanich, R. J. ; Glass, J. T. / Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth. In: Surface Science. 1995 ; Vol. 334, No. 1-3. pp. 179-194.
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