Abstract
We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.
| Original language | English |
|---|---|
| Article number | 6949101 |
| Pages (from-to) | 1245-1247 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 35 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1 2014 |
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Keywords
- printed complementary circuits
- printed electronics
- single-walled carbon nanotube
- thin-film circuits
- thin-film memory
- zinc tin oxide
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide. / Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth.
In: IEEE Electron Device Letters, Vol. 35, No. 12, 6949101, 01.12.2014, p. 1245-1247.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide
AU - Kim, Bongjun
AU - Geier, Michael L.
AU - Hersam, Mark C.
AU - Dodabalapur, Ananth
PY - 2014/12/1
Y1 - 2014/12/1
N2 - We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.
AB - We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.
KW - printed complementary circuits
KW - printed electronics
KW - single-walled carbon nanotube
KW - thin-film circuits
KW - thin-film memory
KW - zinc tin oxide
UR - http://www.scopus.com/inward/record.url?scp=84913539965&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84913539965&partnerID=8YFLogxK
U2 - 10.1109/LED.2014.2364514
DO - 10.1109/LED.2014.2364514
M3 - Article
AN - SCOPUS:84913539965
VL - 35
SP - 1245
EP - 1247
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 12
M1 - 6949101
ER -