Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide

Bongjun Kim; Michael L. Geier; Mark C. Hersam; Ananth Dodabalapur

doi:10.1109/LED.2014.2364514

Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide

Bongjun Kim, Michael L. Geier, Mark C. Hersam, Ananth Dodabalapur

Northwestern University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.

Original language	English
Article number	6949101
Pages (from-to)	1245-1247
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/LED.2014.2364514
Publication status	Published - Dec 1 2014

Keywords

printed complementary circuits
printed electronics
single-walled carbon nanotube
thin-film circuits
thin-film memory
zinc tin oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2014.2364514

Fingerprint Dive into the research topics of 'Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide'. Together they form a unique fingerprint.

Cite this

@article{8994b51af2a44801a720d9c7e2fae17a,

title = "Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide",

abstract = "We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.",

keywords = "printed complementary circuits, printed electronics, single-walled carbon nanotube, thin-film circuits, thin-film memory, zinc tin oxide",

author = "Bongjun Kim and Geier, {Michael L.} and Hersam, {Mark C.} and Ananth Dodabalapur",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/LED.2014.2364514",

language = "English",

volume = "35",

pages = "1245--1247",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide

AU - Kim, Bongjun

AU - Geier, Michael L.

AU - Hersam, Mark C.

AU - Dodabalapur, Ananth

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.

AB - We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.

KW - printed complementary circuits

KW - printed electronics

KW - single-walled carbon nanotube

KW - thin-film circuits

KW - thin-film memory

KW - zinc tin oxide

UR - http://www.scopus.com/inward/record.url?scp=84913539965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84913539965&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2364514

DO - 10.1109/LED.2014.2364514

M3 - Article

AN - SCOPUS:84913539965

VL - 35

SP - 1245

EP - 1247

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

M1 - 6949101

ER -