Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide

Bongjun Kim, Michael L. Geier, Mark C. Hersam, Ananth Dodabalapur

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.

Original languageEnglish
Article number6949101
Pages (from-to)1245-1247
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number12
DOIs
Publication statusPublished - Dec 1 2014

Fingerprint

Flip flop circuits
Single-walled carbon nanotubes (SWCN)
Thin film transistors
Zinc oxide
Tin oxides
Zirconia
Printing
Clocks
Electronic equipment
Semiconductor materials
Networks (circuits)
stannic oxide
zirconium oxide

Keywords

  • printed complementary circuits
  • printed electronics
  • single-walled carbon nanotube
  • thin-film circuits
  • thin-film memory
  • zinc tin oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide. / Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth.

In: IEEE Electron Device Letters, Vol. 35, No. 12, 6949101, 01.12.2014, p. 1245-1247.

Research output: Contribution to journalArticle

Kim, Bongjun ; Geier, Michael L. ; Hersam, Mark C. ; Dodabalapur, Ananth. / Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide. In: IEEE Electron Device Letters. 2014 ; Vol. 35, No. 12. pp. 1245-1247.
@article{8994b51af2a44801a720d9c7e2fae17a,
title = "Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide",
abstract = "We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98{\%}) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.",
keywords = "printed complementary circuits, printed electronics, single-walled carbon nanotube, thin-film circuits, thin-film memory, zinc tin oxide",
author = "Bongjun Kim and Geier, {Michael L.} and Hersam, {Mark C.} and Ananth Dodabalapur",
year = "2014",
month = "12",
day = "1",
doi = "10.1109/LED.2014.2364514",
language = "English",
volume = "35",
pages = "1245--1247",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide

AU - Kim, Bongjun

AU - Geier, Michael L.

AU - Hersam, Mark C.

AU - Dodabalapur, Ananth

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.

AB - We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.

KW - printed complementary circuits

KW - printed electronics

KW - single-walled carbon nanotube

KW - thin-film circuits

KW - thin-film memory

KW - zinc tin oxide

UR - http://www.scopus.com/inward/record.url?scp=84913539965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84913539965&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2364514

DO - 10.1109/LED.2014.2364514

M3 - Article

AN - SCOPUS:84913539965

VL - 35

SP - 1245

EP - 1247

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

M1 - 6949101

ER -