Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation

J. A. Bennett, O. W. Holland, M. Budde, D. K. Thomas, L. C. Feldman

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Abstract

Implantation of 4H-SiC with 1H+ and 28Si+ ions followed by annealing is shown to result in complete ejection or exfoliation of the implanted layer. This is in contrast to H+-only implantation where only partial exfoliation of the surface can be achieved. The mechanisms of this process and its dependence on implantation conditions are discussed. It is shown that amorphization of the surface region during Si+ irradiation is a necessary condition to produce this effect, and that it depends critically upon the thickness of the amorphous layer. Stress, induced by bulk recrystallization of the amorphized layer, acts as an additional driving force for H+ induced exfoliation causing the surface layer to separate completely at a depth near the end-of-range of the H+ ions. The morphologies of the newly exposed surfaces are studied by profilometry measurements and atomic force microscopy.

Original languageEnglish
Pages (from-to)3265-3267
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number22
DOIs
Publication statusPublished - May 29 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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